Overcoming Endurance Limitations in Organic Nonvolatile Memories Through N-Type Small-Molecule Semiconductor Implementation and Thermal Optimization

Abstract

Organic field-effect transistor-based nonvolatile memories (ONVMs) are pivotal in advanced electronic systems but often suffer from limited endurance, a characteristic that remains poorly understood across varying device structures. This work reveals a general mechanism for the deterioration of ONVM endurance related to the imperfect crystallinity of n-type small-molecule-semiconductor charge-trapping layer, N,N′-Ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C₁₃). Through the optimization of annealing temperatures aimed at minimizing deep traps, the endurance characteristics of pentacene-based ONVMs are greatly improved, sustaining high I_ON/I_OFF ratios larger than 10⁴ without notable degradation over 10⁴ programming/erasing cycles, a marked improvement over previous configurations. This research not only advances the understanding of the physical mechanisms underlying ONVMs’ degradation but also offers a practical approach to significantly enhance the endurance of memory devices. These insights are crucial for the development of ONVMs with robust performance suitable for advanced electronic systems.