Improved Magnetoresistance of Tungsten Telluride and Silver Telluride Composites

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Mingxing Cao, Zhigao Zhang, Jian He, Ruifen Hou, Wenjie Gong, Zhihong Wang
{"title":"Improved Magnetoresistance of Tungsten Telluride and Silver Telluride Composites","authors":"Mingxing Cao, Zhigao Zhang, Jian He, Ruifen Hou, Wenjie Gong, Zhihong Wang","doi":"10.1002/aelm.202400866","DOIUrl":null,"url":null,"abstract":"Tungsten telluride (WTe<sub>2</sub>) and silver telluride (Ag<sub>2</sub>Te) are recently developed magnetoresistive materials, and bulk composites of these materials would be extremely advantageous in improving the magnetoresistance characteristics of the individual components and expanding their applications. In this study, previously developed synthesis methods for WTe<sub>2</sub> and Ag<sub>2</sub>Te are applied to effectively engineer WTe<sub>2</sub> and Ag<sub>2</sub>Te bulk composites. Introducing 10% Ag<sub>2</sub>Te in the WTe<sub>2</sub> matrix improves the magnetoresistance and lowers the critical magnetic field and higher onset temperature relative to those of pure-phase WTe<sub>2</sub>. The relationship between the magnetoresistance performance and Ag<sub>2</sub>Te content is further explored using simulations. The onset temperature and critical magnetic field follow the Kohler rule based on resistance calculations. The excellent composite magnetoresistance of these materials will find applications in the field of electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202400866","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Tungsten telluride (WTe2) and silver telluride (Ag2Te) are recently developed magnetoresistive materials, and bulk composites of these materials would be extremely advantageous in improving the magnetoresistance characteristics of the individual components and expanding their applications. In this study, previously developed synthesis methods for WTe2 and Ag2Te are applied to effectively engineer WTe2 and Ag2Te bulk composites. Introducing 10% Ag2Te in the WTe2 matrix improves the magnetoresistance and lowers the critical magnetic field and higher onset temperature relative to those of pure-phase WTe2. The relationship between the magnetoresistance performance and Ag2Te content is further explored using simulations. The onset temperature and critical magnetic field follow the Kohler rule based on resistance calculations. The excellent composite magnetoresistance of these materials will find applications in the field of electronics.

Abstract Image

提高碲化钨和碲化银复合材料的磁阻
碲化钨(WTe2)和碲化银(Ag2Te)是近年来发展起来的磁阻材料,这些材料的体块复合材料在改善单个元件的磁阻特性和扩大其应用领域方面具有极大的优势。在本研究中,将先前开发的WTe2和Ag2Te的合成方法应用于有效地设计WTe2和Ag2Te块体复合材料。与纯相WTe2相比,在WTe2基体中加入10%的Ag2Te,提高了WTe2的磁阻,降低了临界磁场,提高了起始温度。通过仿真进一步探讨了磁阻性能与Ag2Te含量之间的关系。起始温度和临界磁场遵循基于电阻计算的科勒规则。这些材料优良的复合磁阻性能将在电子领域得到应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信