Driving waveform modification for investigating trade-off between switching loss and gate overshoot in SiC MOSFETs

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-03-04 DOI:10.1016/j.microrel.2025.115653

Bang-Ren Chen , Cheng Sung , Yu-Sheng Hsiao , Wei-Chen Yu , Wei-Cheng Lin , Surya Elangovan , Yi-Kai Hsiao , Hao-Chung Kuo , Chang-Ching Tu , Tian-Li Wu

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Abstract

SiC MOSFETs are crucial for efficient power conversion in electric vehicles, especially in the traction inverters operating on 800-V battery architectures. Their unipolar nature offers significantly lower switching losses compared to bipolar Si IGBTs. However, achieving high efficiency without compromising reliability remains a challenge. This study investigates the impact of driving waveforms on the SiC MOSFET switching loss and overshoot. Unlike conventional gate drivers, our approach involves a closed-loop amplifier combined with a push-pull circuit, enabling controllable gate driving waveforms through strategically placing a low-pass filter before the amplifier, so called the pre-RC method. Compared to the conventional method of placing R_G in front of the gate, the pre-RC method shows notable decrease in turn-on switching loss for the t_rising shorter than about 0.4 μs. The lower switching loss can be attributed to the larger |dV_GS/dt|at around the V_th of the SiC MOSFET. However, the larger|dV_GS/dt|also leads to the larger V_GS overshoot. This work demonstrates that a well balance between the switching loss and overshoot can be found by optimizing the driving waveform.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.