Enhanced photocatalytic activity of Sn3O4/TiO2 heterostructures for Cr(Ⅵ) reduction and isoniazid degradation

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yuxin Tian , Wei Zhang , Xiaodong Li , Xiaotong Yin , Yu Liu , Shi Su , Qiushi Wang , Lina Zhang
{"title":"Enhanced photocatalytic activity of Sn3O4/TiO2 heterostructures for Cr(Ⅵ) reduction and isoniazid degradation","authors":"Yuxin Tian ,&nbsp;Wei Zhang ,&nbsp;Xiaodong Li ,&nbsp;Xiaotong Yin ,&nbsp;Yu Liu ,&nbsp;Shi Su ,&nbsp;Qiushi Wang ,&nbsp;Lina Zhang","doi":"10.1016/j.mssp.2025.109441","DOIUrl":null,"url":null,"abstract":"<div><div>The utilization of photocatalytic technology to degrade contaminants such as heavy metals and antibiotics holds immense significance. Nevertheless, the pursuit of highly efficient photocatalysts remains a formidable challenge. Herein, a series of Sn<sub>3</sub>O<sub>4</sub>/TiO<sub>2</sub> (ST) hybrid photocatalysts composed of TiO<sub>2</sub> nanoparticles (NPs) and Sn<sub>3</sub>O<sub>4</sub> nanosheets (NSs) have been designed and constructed to enhance the reduction of Cr(VI) and the degradation of ISN. TiO<sub>2</sub> NPs were loaded onto the 2D layered flowerlike Sn<sub>3</sub>O<sub>4</sub> NSs uniformly through a solvothermal approach, resulting in unique three-dimensional (3D) heterostructures. As expected, all ST composites exhibit higher degradation activity compared to pristine Sn<sub>3</sub>O<sub>4</sub> and TiO<sub>2</sub>. The optimal ST-0.6 composite (with a TTIP amount of 0.6 g) possesses the highest degradation rate, achieving a 99.6 % removal for Cr(Ⅵ) within 60 min under Xenon light irradiation, with a rate constant (<em>k</em>) of 0.091 min<sup>−1</sup>. This performance surpasses that of pristine Sn<sub>3</sub>O<sub>4</sub> and TiO<sub>2</sub>, which have rate constants of 0.0199 min<sup>−1</sup> and 0.0186 min<sup>−1</sup>. Additionally, the ST-0.6 composite effectively removes 72.8 % for isoniazid (ISN) within 80 min. It exhibits the highest photodegradation rate of 0.014 min<sup>−1</sup>, being 1.3 and 140 times higher than that of TiO<sub>2</sub> (0.0107 min<sup>−1</sup>) and Sn<sub>3</sub>O<sub>4</sub> (0.0001 min<sup>−1</sup>), respectively. Furthermore, the photocatalytic degradation activities of the recovered samples retain their photocatalytic degradation performance after three consecutive experimental cycles, indicating relatively excellent durability. According to the photocatalytic and characterization results, the significantly enhanced photoactivity of the ST hybrid photocatalyst is attributed to the increased reaction sites, improved light-harvesting properties, and enhanced separation and transfer efficiency of photogenerated electrons and holes within the ST heterostructures.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109441"},"PeriodicalIF":4.2000,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125001787","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

The utilization of photocatalytic technology to degrade contaminants such as heavy metals and antibiotics holds immense significance. Nevertheless, the pursuit of highly efficient photocatalysts remains a formidable challenge. Herein, a series of Sn3O4/TiO2 (ST) hybrid photocatalysts composed of TiO2 nanoparticles (NPs) and Sn3O4 nanosheets (NSs) have been designed and constructed to enhance the reduction of Cr(VI) and the degradation of ISN. TiO2 NPs were loaded onto the 2D layered flowerlike Sn3O4 NSs uniformly through a solvothermal approach, resulting in unique three-dimensional (3D) heterostructures. As expected, all ST composites exhibit higher degradation activity compared to pristine Sn3O4 and TiO2. The optimal ST-0.6 composite (with a TTIP amount of 0.6 g) possesses the highest degradation rate, achieving a 99.6 % removal for Cr(Ⅵ) within 60 min under Xenon light irradiation, with a rate constant (k) of 0.091 min−1. This performance surpasses that of pristine Sn3O4 and TiO2, which have rate constants of 0.0199 min−1 and 0.0186 min−1. Additionally, the ST-0.6 composite effectively removes 72.8 % for isoniazid (ISN) within 80 min. It exhibits the highest photodegradation rate of 0.014 min−1, being 1.3 and 140 times higher than that of TiO2 (0.0107 min−1) and Sn3O4 (0.0001 min−1), respectively. Furthermore, the photocatalytic degradation activities of the recovered samples retain their photocatalytic degradation performance after three consecutive experimental cycles, indicating relatively excellent durability. According to the photocatalytic and characterization results, the significantly enhanced photoactivity of the ST hybrid photocatalyst is attributed to the increased reaction sites, improved light-harvesting properties, and enhanced separation and transfer efficiency of photogenerated electrons and holes within the ST heterostructures.

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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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