Deciphering the structural and electrical properties of Ce and Ta ion-doped Bi3Ti1.5W0.5O9 bismuth layered piezoelectric ceramics

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-04 DOI:10.1016/j.mssp.2025.109442

Benjin Xu, Xiangping Jiang, Renfen Zeng, Xin Nie, Chao Chen, Xiaokun Huang, Na Tu, Yunjing Chen, Chong Zhao

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引用次数: 0

Abstract

The component-structure-property relationship of Bi_3-xCe_xTi_1.5-xTa_xW_0.5O₉(BTW-xCeTa) bismuth layered ceramics prepared by the solid-phase method has been subjected to a comprehensive and systematic investigation. In response to the demand for high-performance bismuth layered piezoelectric ceramics, we doped Ce and Ta ions, resulting in a significant enhancement of both the piezoelectric performance (d₃₃) and the Curie temperature (T_C) in BTW-0.06CeTa ceramics. The results of XRD and its refinement data demonstrate the successful synthesis of BTW phases with a reduced degree of orthorhombic phase. The introduction of Ce and Ta ions disrupts the long-range ordering, leading to the refinement of the original macroscopic domains into highly flexible and responsive microdomains. The favorable resistivity and impedance provide a robust foundation for the complete polarization of the ceramic. The 180° domains facilitate a reduction in interior stress, thereby enhancing the remanent polarization (P_r). This work further reveals the origin of high piezoelectric properties in BTW ceramics. The BTW-0.06CeTa ceramic showed higher performance compared to the BTW ceramic. Specifically, a high d₃₃ value of 20.2 pC/N was obtained, which is an increase of 169 % compared to the undoped sample. A higher T_C value (734 °C) was maintained, dielectric loss (tanδ) at 500 °C was 0.15 (29 % optimized), and resistivity (ρ) was 7.9 × 10⁵ Ω cm. This study demonstrates the potential of BTW piezoelectric ceramics for high-temperature applications.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.