Optimizing the resistive switching performance of sputter-deposited Gd2Hf2O7 thin films via thermal treatment

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-04 DOI:10.1016/j.mssp.2025.109443

Chieh-Wen Lin, Ricky W. Chuang, Cheng-Liang Huang

{"title":"Optimizing the resistive switching performance of sputter-deposited Gd2Hf2O7 thin films via thermal treatment","authors":"Chieh-Wen Lin, Ricky W. Chuang, Cheng-Liang Huang","doi":"10.1016/j.mssp.2025.109443","DOIUrl":null,"url":null,"abstract":"<div><div>A resistive random-access memory (RRAM) device based on Gd2Hf2O7 thin films was fabricated using the sputtering technique, and the effect of thermal treatment on its resistive switching performance was systematically studied. The defect-fluorite structure of Gd2Hf2O7 inherently contains oxygen vacancies, which facilitate the formation of effective conductive filaments. Optimized thermal treatment significantly improved the resistive switching performance by regulating the oxygen vacancy content, resulting in a forming-free device. The Al/Gd2Hf2O7/ITO RRAM device annealed at 300 °C exhibited forming-free behavior, a switching endurance of 924 cycles, and a high-resistance state (HRS)/low-resistance state (LRS) ratio exceeding 101. Furthermore, it demonstrated a retention time of over 104 s at both room temperature and 85 °C, highlighting its excellent reliability as an RRAM device. Additionally, post-metal annealing reduced the operating voltage to −1.50 V/1.09 V and increased the switching endurance to 1047 cycles. This enhancement is attributed to the development of a thicker AlOx interface layer, along with the diffusion of In ions and trace amounts of Al ions into the film.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109443"},"PeriodicalIF":4.2000,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125001805","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

A resistive random-access memory (RRAM) device based on Gd₂Hf₂O₇ thin films was fabricated using the sputtering technique, and the effect of thermal treatment on its resistive switching performance was systematically studied. The defect-fluorite structure of Gd₂Hf₂O₇ inherently contains oxygen vacancies, which facilitate the formation of effective conductive filaments. Optimized thermal treatment significantly improved the resistive switching performance by regulating the oxygen vacancy content, resulting in a forming-free device. The Al/Gd₂Hf₂O₇/ITO RRAM device annealed at 300 °C exhibited forming-free behavior, a switching endurance of 924 cycles, and a high-resistance state (HRS)/low-resistance state (LRS) ratio exceeding 10¹. Furthermore, it demonstrated a retention time of over 10⁴ s at both room temperature and 85 °C, highlighting its excellent reliability as an RRAM device. Additionally, post-metal annealing reduced the operating voltage to −1.50 V/1.09 V and increased the switching endurance to 1047 cycles. This enhancement is attributed to the development of a thicker AlO_x interface layer, along with the diffusion of In ions and trace amounts of Al ions into the film.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.