The dissolution behavior of oxygen precipitates under high temperature annealing in 300 mm Czochralski silicon

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-03 DOI:10.1016/j.mssp.2025.109436

Hao Wang , Yun Liu , Zhongying Xue , Xing Wei

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引用次数: 0

Abstract

In this paper, the factors affecting the dissolution behavior oxygen precipitates in 300 mm Czochralski silicon during high-temperature annealing were quantitatively investigated. By combining gaseous HCl etching with localized light scattering and scanning electron microscopy, we established the relationship between the latex spherical equivalent size of the etch pits and the actual size of the corresponding oxygen precipitates. This method could not only detect nanoscale oxygen precipitates, but also obtain the number and size distribution of oxygen precipitates by a single scan, thus providing a reliable means to compare the changes in the density and size of oxygen precipitates before and after annealing. Furthermore, considering the injection of self-interstitial atoms during the oxidation process and the out-diffusion of oxygen atoms in wafers, we used the classical nucleation model to calculate the critical size of oxygen precipitates along the depth direction, which was proved to be consistent with the experimental results. These findings enhance the understanding of oxygen precipitates dissolution mechanisms and provide valuable guidance for the optimization of annealing conditions and crystal growth conditions.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.