Electrical properties of normally-on hydrogenated Si-terminated diamond field effect transistors

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-02 DOI:10.1016/j.mssp.2025.109426

Yuanchen Ma , Qi He , Jinfeng Zhang , Zihui Zhu , Zeyang Ren , Kai Su , Xinxin Yu , Qihui Xu , Jincheng Zhang , Yue Hao

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引用次数: 0

Abstract

Silicon-terminated (C-Si) diamond with high conductivity was prepared by Si sputtering on diamond surface followed by Si etching-away in 1000 °C hydrogen plasma. Then normally-on hydrogenated C-Si diamond metal-oxide-semiconductor field-effect transistor (MOSFET) devices with different gate lengths had been fabricated. The carrier transport characteristics of the device were investigated by the fat gate MOSFET device with a gate length of 50 μm, a constant hole mobility of 49.1 cm²/(Vs) can be maintained over a large carrier concentration range (from 6.7 × 10¹² cm⁻² to 2.2 × 10¹³ cm⁻²) for −8 V ≤ V_GS ≤ −1 V based on the capacitance-voltage (C-V) characteristics and the direct-current (DC) characteristics of the device. A device with a gate length of 3.5-μm shows the threshold voltage (V_TH), maximum drain current (I_Dmax), maximum transconductance (G_m) and on-off ratio of 2.5 V, 140.4 mA/mm, 22.9 mS/mm and 10⁹, respectively. When the temperature increased from room temperature to 150 °C, the device exhibited a reduction in I_Dmax, which may be due to the enhanced carrier scattering and reduced mobility. Normally-on C-Si diamond FET devices provided new possibilities for the fabrication of high-performance diamond microwave power devices.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.