Redox-active Co3O4/MgV2O5 heterostructure with abundant reaction sites for aqueous asymmetric supercapacitor: Insight into charge storage capacity via Dunn's modeling

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Seemab Hussnain , Muhammad Ramzan Khawar , Hafiz Talha Hasnain Rana , Naveed Akhtar Shad , Muhammad Khawar Abbas , Munirah D. Albaqami , Awais Ahmad , Sumin Cho , Yasir Javed , Dongwhi Choi
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引用次数: 0

Abstract

Batteries and supercapacitors are promising energy storage devices to meet the current demand of energy storage demands. Unfortunately, batteries do not retain high cyclic performance as well as power density. On the other hand, supercapacitors retain high cyclic stability but less energy density. Benefiting from the charge storage mechanism of these two devices, the composite material of transition oxide and vanadate is proposed to boost up the specific capacity power density and cyclic stability. Due to the high theoretical capacity of cobalt oxide and high conductivity of magnesium vanadate is selected as the key component materials of composite material. The formation of material composition is confirmed by using the X-ray diffraction technique and tunneling electron microscopy which revealed the successful heterostructure. The morphological assessment revealed that highly dispersed cobalt oxide in magnesium vanadate flakes leads to the increase in overall capacitance (495 C/g) of the composite material in comparison with the Co3O4 and MgV2O5 which shows 88 C/g and 43 C/g at 1 A/g Current density respectively. Further, the cooperation of cobalt oxide led to improved EDLC behavior thus improving the power density. The highest specific capacity may be due to the shorter diffusion time (0.09 s) of ionic species for intercalation into electrode material. Moreover, highly dispersed cobalt oxide in magnesium vanadate provides more reaction sites due to the presence of multi-redox species with different valence states (Co+3, Co+4, Mg+3, Mg+4) and high surface area which results in high specific capacitance. Moreover, the fabricated prototype device demonstrates an excellent power density of 13200 W/kg at 5 A/g. Also, the device can successfully deliver 8.9 Wh/kg with 92 % coulombic efficiency and 90 % cyclic retention after 2000 cycles. The fabricated Co3O4/MgV2O5//AC device operated the commercial calculator, indicating the practical viability of the device.

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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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