Sreelakshmi Madhavanunni Rekha, S. Venkataprasad Bhat
{"title":"Transparent ZnO/CuI nanoparticle heterojunction for self-powered UV detection: Fast response and high Voc with CuO interfacial layer","authors":"Sreelakshmi Madhavanunni Rekha, S. Venkataprasad Bhat","doi":"10.1016/j.mssp.2025.109418","DOIUrl":null,"url":null,"abstract":"<div><div>The allure of cost-effectiveness, scalability, and flexibility makes solution-processed transparent thin films appealing for applications like smart windows, displays, portable electronics, and automotive systems. The present study investigates the development of a transparent ZnO/CuI heterojunction for self-powered UV photodetection with all nanoparticle layers made using a simple, non-toxic solution-processed method. Although the choice of all nanoparticle layers makes the device much simpler and scalable, the prime challenges such as the high potential barrier for carrier transport, and recombination-tunneling paths due to interface defects undermine its functionality. To mitigate these issues and to enhance the charge transport, CuO is introduced as a novel interfacial layer carefully chosen for the energy band alignment within the heterojunction. This significantly improves the responsivity to 20.83 mA/W and detectivity to 1.61 × 10<sup>12</sup>, in the self-powered mode with a Voc of 41 mV under 5 mW/cm<sup>2</sup> UV illumination (365 nm). Interestingly, the device exhibits a faster response, with the rise and decay time of 0.025 s and 0.106 s respectively, surpassing other solution processed ZnO/CuI heterojunction devices reported. The photodetector demonstrates efficient performance under low-intensity UV illumination (∼0.056 mW/cm<sup>2</sup>), as confirmed by intensity-dependent studies. This presents a low-cost scalable approach for energy efficient weak light UV photodetectors with transparent heterojunction films potentially useful in future smart electronics and window applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109418"},"PeriodicalIF":4.2000,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125001556","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The allure of cost-effectiveness, scalability, and flexibility makes solution-processed transparent thin films appealing for applications like smart windows, displays, portable electronics, and automotive systems. The present study investigates the development of a transparent ZnO/CuI heterojunction for self-powered UV photodetection with all nanoparticle layers made using a simple, non-toxic solution-processed method. Although the choice of all nanoparticle layers makes the device much simpler and scalable, the prime challenges such as the high potential barrier for carrier transport, and recombination-tunneling paths due to interface defects undermine its functionality. To mitigate these issues and to enhance the charge transport, CuO is introduced as a novel interfacial layer carefully chosen for the energy band alignment within the heterojunction. This significantly improves the responsivity to 20.83 mA/W and detectivity to 1.61 × 1012, in the self-powered mode with a Voc of 41 mV under 5 mW/cm2 UV illumination (365 nm). Interestingly, the device exhibits a faster response, with the rise and decay time of 0.025 s and 0.106 s respectively, surpassing other solution processed ZnO/CuI heterojunction devices reported. The photodetector demonstrates efficient performance under low-intensity UV illumination (∼0.056 mW/cm2), as confirmed by intensity-dependent studies. This presents a low-cost scalable approach for energy efficient weak light UV photodetectors with transparent heterojunction films potentially useful in future smart electronics and window applications.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.