New Evidence for Nonradiative Recombination Enhanced Defect Reaction Effect at Si-SiO₂ Interface Traps

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-02-04 DOI:10.1109/TED.2025.3532410

Huimin Geng;Enhao Guan;Jianqun Yang;Gang Lv;Weiqi Li;Zhongli Liu;Wenzhu Shao;Xingji Li

引用次数: 0

Abstract

The evolution states of Si-SiO2 interface traps have been attracting much attention, but there are few reports on the recombination enhanced defect reaction (REDR) effect at interface traps. Here, the REDR effect is studied at the Si-SiO2 interface in the base region of gate-controlled lateral p-n-p transistors (GLPNPs) by forward bias method. There is a significant correlation between the peak variation and the ionization defects (oxide charges and interface traps) in gate sweep (GS) curve. For GLPNPs with high oxide charges and low interface traps, the change rate of surface recombination current at peak in GS curve is smaller. This result provides strong evidence for the REDR effect of interface traps. In addition, based on technology computer-aided design (TCAD) simulation, the possible change of interface traps state after REDR effect is proposed.

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Si-SiO2 界面陷阱的演化状态一直备受关注，但有关界面陷阱的重组增强缺陷反应（REDR）效应的报道却很少。本文采用正向偏压法研究了栅控横向 p-n-p 晶体管（GLPNPs）基区 Si-SiO2 界面的 REDR 效应。在栅极扫描（GS）曲线中，峰值变化与电离缺陷（氧化物电荷和界面陷阱）之间存在明显的相关性。对于高氧化物电荷和低界面陷阱的 GLPNPs，GS 曲线峰值处的表面重组电流变化率较小。这一结果有力地证明了界面陷阱的 REDR 效应。此外，基于技术计算机辅助设计（TCAD）模拟，提出了 REDR 效应后界面陷阱状态可能发生的变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.