Design and Cold Test of a Broadly Tunable Terahertz Short Double-Grating Rectangular Waveguide Slow Wave Structure

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-02-10 DOI:10.1109/TED.2025.3534152

Jibran Latif;Zhanliang Wang;Atif Jameel;Muhammad Khawar Nadeem;Bilawal Ali;Shaomeng Wang;Yubin Gong;Huarong Gong

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引用次数: 0

Abstract

A short double-grating rectangular waveguide (DGRW) slow wave structure (SWS) is designed and compared in detail with DGRW. Significant modifications are made to the corrugation geometry to optimize the dispersion characteristics, resulting in a broader frequency passband and enhanced frequency tunability. The high-frequency performance is analyzed in terms of dispersion and interaction impedance. The structure shows an interaction impedance of

$1.5~\Omega $

at 0.34 THz. To confirm the effectiveness of the proposed design, a 0.34-THz backward wave oscillator circuit is designed and fabricated comprising 160 periods. The circuit is assembled and cold-tested for scattering parameters. The results show

${S}_{{21}}$

values above −1.5 dB and

${S}_{{11}}$

below −20 dB for a broad frequency range. The beam-wave interaction simulations using a 30-kV, 30-mA electron beam, and 0.2-T focusing magnetic field show that the backward wave oscillator based on the proposed design achieves an average output power of 16 W at 0.34 THz, with a frequency tuning range of 95 GHz when compared with 57 GHz for the DGRW-based backward wave oscillator.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.