Gain–Bandwidth Product Optimization of Short-Wavelength Infrared HgCdTe e-Avalanche Photodiodes

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-02-04 DOI:10.1109/TED.2025.3534747

Wenrui Wei;Qing Li;Zhuangzhuang Xu;Jiachang Chen;Lu Chen;Huijun Guo;Peng Wang;Weida Hu

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Abstract

The short-wave infrared (SWIR) HgCdTe avalanche photodiodes (APDs) have demonstrated promising applications in low-flux and high-speed optical communication systems at high temperatures. However, the big gap between the theoretical highest gain-bandwidth product (GBP) and the reported performances indicates that there is still room for device optimization. In this work, numerical models were established for the 3-

$\mu $

m cutoff wavelength SWIR HgCdTe electron-initiated APDs (e-APDs) working at 140 K. The absorption and multiplication layer thickness dependence of the impulse response and multiplication gain has been characterized. Our results show that a thinner absorption and multiplication layer will enhance the bandwidth performance, and a mesa structure device can achieve a higher bandwidth compared to a planar one. The tradeoff between the bandwidth and multiplication gain was analyzed to optimize the GBP of the device. The structural optimization increases the device bandwidth from 300 to 750 MHz and achieved a 21-GHz GBP at 16 V bias. Specially, the high GBP and ability to maintain a low excess noise factor make HgCdTe APDs extremely valuable for high-quality signal transmission applications.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.