Effects of Homogeneous Buffer Layer on the Crystalline Quality and Electrical Properties of CdZnTe Epitaxial Films

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-02-10 DOI:10.1109/TED.2025.3531320

Xue Tian;Tingting Tan;Kun Cao;Xin Wan;Heming Wei;Ran Jiang;Yu Liu;Renying Cheng;Gangqiang Zha

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引用次数: 0

Abstract

The carrier transport process in CdZnTe epitaxial films is significantly influenced by the substantial lattice mismatch between the CdZnTe films and GaAs substrates. To mitigate this issue, a uniform buffer layer was fabricated between the substrates and the CdZnTe films using the close-space sublimation (CSS). The impact of the buffer layers on surface roughness and crystalline quality of the films was investigated through optical microscopy, atomic force microscopy, and X-ray diffraction. The effects on the electrical performance were studied through I–V tests and alpha-particle energy spectra. The results demonstrate that a uniform buffer layer, grown at

$400~^{\circ }$

C for 5 min, significantly enhances the crystalline quality, resistivity, and carrier transport properties of the CdZnTe epitaxial films grown on low-resistance GaAs(001) substrates. After annealing at

$400~^{\circ }$

C in a Te2 atmosphere for 4 h, the energy resolution of the detector improved to 1.5% in vacuum and 11.23% in air conditions.

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均匀缓冲层对CdZnTe外延薄膜晶体质量和电性能的影响

CdZnTe外延薄膜中的载流子输运过程受到CdZnTe薄膜与GaAs衬底之间晶格失配的显著影响。为了缓解这一问题，采用近空间升华（CSS）在衬底和CdZnTe薄膜之间制备了均匀的缓冲层。通过光学显微镜、原子力显微镜和x射线衍射研究了缓冲层对薄膜表面粗糙度和结晶质量的影响。通过I-V测试和α粒子能谱研究了对电性能的影响。结果表明，在$400~^{\circ}$ C温度下生长5 min的均匀缓冲层可以显著提高低阻GaAs（001）衬底上生长的CdZnTe外延薄膜的晶体质量、电阻率和载流子输运性能。在Te2气氛中以$400~^{\circ}$ C退火4 h后，探测器的能量分辨率在真空条件下提高到1.5%，在空气条件下提高到11.23%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.