Experimental Demonstration and Modeling of BEOL-Compatible IGZO-Based Ferroelectric-Modulated Diodes

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-02-04 DOI:10.1109/TED.2025.3534182

Leming Jiao;Zuopu Zhou;Zijie Zheng;Kaizhen Han;Qiwen Kong;Xiaolin Wang;Haiwen Xu;Jishen Zhang;Chen Sun;Yuye Kang;Gengchiau Liang;Xiao Gong

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引用次数: 0

Abstract

We experimentally demonstrate a back-end-of-line (BEOL) compatible InGaZnOx (IGZO)-based ferroelectric-modulated diode (FMD), showcasing effective enhancement of the memory window (MW) compared to ferroelectric field-effect transistor (FeFET) fabricated under identical process conditions. In addition, we establish a modeling framework elucidating the interplay between ferroelectric (FE) polarization and Schottky contact to reproduce the energy barrier modulation effect. A comparative analysis of MW formation mechanisms between conventional oxide semiconductor (OS) FeFETs and our novel FMDs is conducted, validating the performance improvements of our FMD devices by overcoming the weak erase problem of OS FeFETs. Furthermore, we carry out a systematic investigation into the structural dependence of the FMD MW by varying the Schottky metalwork functions and the semiconductor layer thicknesses. These critical insights, supported by both experiments and simulations, provide a design guideline for optimizing MW of BEOL-compatible FE memories to meet the requirements of future nonvolatile memory (NVM) applications.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.