Hyoseok Kim;Ilho Myeong;Seunghyun Kim;Sungduk Hong;Sung Jin Kim;Wanki Kim;Daewon Ha;Dae Sin Kim
{"title":"Influence of Bulk Trap Properties in HfO₂-Based Ferroelectric Layers on the Transient Dynamics of Ferroelectric Field-Effect Transistors","authors":"Hyoseok Kim;Ilho Myeong;Seunghyun Kim;Sungduk Hong;Sung Jin Kim;Wanki Kim;Daewon Ha;Dae Sin Kim","doi":"10.1109/TED.2025.3539640","DOIUrl":null,"url":null,"abstract":"In this study, we investigated the read-after-write-delay (RAWD) phenomenon in FeFETs by considering the influence of trap dynamics on the device characteristics. First of all, it was confirmed that it is necessary to interpret the RAWD phenomenon through bulk trap. Through extensive simulations, we also established a quantitative relationship between RAWD and bulk trap properties, such as trap level and trap density. The results indicate that both trap density and trap level play a significant role in determining the variation in <inline-formula> <tex-math>${V} _{t}$ </tex-math></inline-formula> with delay time, which in turn affects the memory window (MW) of the device. Finally, we provide guidelines on the characteristics of HfO2-based ferroelectric materials that are required to meet the MW and intrinsic speed required for various FeFET applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 3","pages":"1125-1130"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10892303/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, we investigated the read-after-write-delay (RAWD) phenomenon in FeFETs by considering the influence of trap dynamics on the device characteristics. First of all, it was confirmed that it is necessary to interpret the RAWD phenomenon through bulk trap. Through extensive simulations, we also established a quantitative relationship between RAWD and bulk trap properties, such as trap level and trap density. The results indicate that both trap density and trap level play a significant role in determining the variation in ${V} _{t}$ with delay time, which in turn affects the memory window (MW) of the device. Finally, we provide guidelines on the characteristics of HfO2-based ferroelectric materials that are required to meet the MW and intrinsic speed required for various FeFET applications.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.