Eu2O3/carbon-nanospheres for enhanced photocatalytic degradation of rhodamine B dye

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-01 DOI:10.1016/j.mssp.2025.109422

Jialong Ma , Yishuai Jing , Yuting Li , Shanbo Cui , Xin Zhao , Jiaming Song

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引用次数: 0

Abstract

The demand for water pollution control accelerated the development of environment-friendly technologies, e.g., photocatalysis, for resolving the pollution issue efficiently. Wide bandgap rare earth oxide semiconductors are potential photocatalysts with low toxicity for the environment, but the luminescence of rare earth ions and narrow light absorption band restrict their photocatalytic degradation efficiency. In this study, we synthesized a composite structure consisting of Eu₂O₃ nanoparticles (NPs) and carbon-nanospheres (CNSs) by annealing both monomers in argon atmosphere together. The photocatalytic degradation performance of the composites with different mass ratios were investigated by utilizing rhodamine B (RhB) dye as the target organic pollutant. The results show that the combination with CNSs significantly improved the photocatalytic performance of Eu₂O₃, and the composite's highest removal efficiency reached up to 55 % within 60 min, which is competitive to those for other rare earth oxides. The improved photocatalytic degradation capacity for the composite structure was attributed to the luminescence suppression of Eu³⁺ and the increased visible-light absorption by CNSs. Our research sheds light on the possible routes for enhancing the photocatalytic degradation capability of rare earth oxides in the environment pollution abatement.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.