Cause analysis on abnormal defects between metal layers of IGBT dies for power modules

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-03-01 DOI:10.1016/j.microrel.2025.115642

Jie Chen , Yi Gong , Zhen-Guo Yang

{"title":"Cause analysis on abnormal defects between metal layers of IGBT dies for power modules","authors":"Jie Chen , Yi Gong , Zhen-Guo Yang","doi":"10.1016/j.microrel.2025.115642","DOIUrl":null,"url":null,"abstract":"<div><div>IGBT dies are widely applied in power modules for new energy vehicles at present, and meanwhile, the reliability has been a research emphasis. As addressed in this paper, abnormal defects at the Al-Ni interfaces of IGBT dies resulted in the failure of power modules for new energy vehicles during the power cycling tests. Based on the failure characteristics, a systematical investigation was conducted to explore the root causes of these defects through a series of study methods such as process traceability, characterization analysis and theoretical analysis. At last, the root causes of the failure were determined through the comprehensive analysis. Furthermore, the formation processes of abnormal defects under different states were reverted, and the detailed formation mechanisms were also confirmed from the special separation characteristics at the Al-Ni interface. Besides, the corresponding countermeasures were also proposed according to the conclusions obtained. It was believed that the achievements would help improve the preparation quality of metal layers of IGBT dies and enhance the integral reliability of power modules for new energy vehicles.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"167 ","pages":"Article 115642"},"PeriodicalIF":1.6000,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425000551","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

IGBT dies are widely applied in power modules for new energy vehicles at present, and meanwhile, the reliability has been a research emphasis. As addressed in this paper, abnormal defects at the Al-Ni interfaces of IGBT dies resulted in the failure of power modules for new energy vehicles during the power cycling tests. Based on the failure characteristics, a systematical investigation was conducted to explore the root causes of these defects through a series of study methods such as process traceability, characterization analysis and theoretical analysis. At last, the root causes of the failure were determined through the comprehensive analysis. Furthermore, the formation processes of abnormal defects under different states were reverted, and the detailed formation mechanisms were also confirmed from the special separation characteristics at the Al-Ni interface. Besides, the corresponding countermeasures were also proposed according to the conclusions obtained. It was believed that the achievements would help improve the preparation quality of metal layers of IGBT dies and enhance the integral reliability of power modules for new energy vehicles.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.