{"title":"Failure analysis and simulation of IGBT under active and passive thermal cycling","authors":"Jing Han , Xin Li , Tong An , Yishu Wang , Fu Guo","doi":"10.1016/j.microrel.2025.115638","DOIUrl":null,"url":null,"abstract":"<div><div>This paper discusses the fatigue failure mechanisms associated with the packaging of Insulated Gate Bipolar Transistors (IGBTs) and investigates the failure behavior of aluminum wires and die-attached solder layers within IGBTs. The study utilizes an electro-thermal-mechanical finite element model, temperature shock tests, and power cycle tests. Using finite element analysis with COMSOL Multiphysics software, the failure process of aluminum wires and solder layers in IGBT power modules was simulated, and the temperature and stress distribution of the devices during the power cycle were determined. The Anand model was employed to analyze the creep mechanism of the solder layer. Through Electron Backscatter Diffraction (EBSD) analysis, the macroscopic failure behavior was correlated with the microstructure, revealing the grain size and grain boundary evolution in the crack tip region during the crack propagation of the Al bonding wires. The research aims to enhance the understanding of fatigue failure mechanisms and improve the reliability of IGBT devices.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"167 ","pages":"Article 115638"},"PeriodicalIF":1.6000,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425000514","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This paper discusses the fatigue failure mechanisms associated with the packaging of Insulated Gate Bipolar Transistors (IGBTs) and investigates the failure behavior of aluminum wires and die-attached solder layers within IGBTs. The study utilizes an electro-thermal-mechanical finite element model, temperature shock tests, and power cycle tests. Using finite element analysis with COMSOL Multiphysics software, the failure process of aluminum wires and solder layers in IGBT power modules was simulated, and the temperature and stress distribution of the devices during the power cycle were determined. The Anand model was employed to analyze the creep mechanism of the solder layer. Through Electron Backscatter Diffraction (EBSD) analysis, the macroscopic failure behavior was correlated with the microstructure, revealing the grain size and grain boundary evolution in the crack tip region during the crack propagation of the Al bonding wires. The research aims to enhance the understanding of fatigue failure mechanisms and improve the reliability of IGBT devices.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.