Degradation modeling of InGaAs/InP avalanche photodiodes using calibrated technology computer-aided design

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-02-27 DOI:10.1016/j.microrel.2025.115636

Heewon Bang , Yunseok Han , Sunho Kim , Ilgu Yun

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引用次数: 0

Abstract

In this study, the degradation models of InGaAs/InP avalanche photodiodes (APDs) are proposed based on accelerated life testing (ALT) using technology computer-aided design (TCAD). Degradation modes identified by ALT are categorized into three types: (1) dark current (I_D) increase, (2) breakdown voltage (V_BR) reduction, and (3) the combination of (1) and (2). Two possible degradation mechanisms are suggested based on TCAD simulation: surface degradation for increasing I_D and Zn penetration for decreasing V_BR. After the initial I-V calibration using TCAD simulations, key degradation parameters were calibrated with ALT results to model the degraded characteristics of the APDs. As a result, an increase in the surface trap density of states at the SiN_x/InP interface (N_int) and the fixed charge at the SiN_x/InP interface (Q_int) leads to an increase in I_D at the InP/SiN_x surface. In addition, a doping region was added with a gaussian function profile to model Zn penetration. An increase in the degradation parameter (α) within the gaussian equation leads to a decrease in V_BR. The degradation models are investigated to evaluate changes in the structural and material properties over ALT time and performance of APDs. This study contributes to the understanding of degradation processes in InGaAs/InP APDs and also provides valuable insights into the analysis of device characteristics through similar reliability tests without the need for destructive or chemical analysis.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.