Polyvinylidene Fluoride Enhanced Quantum Dot Short-Wave Infrared Photodetectors

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI:10.1109/LED.2025.3532323

Haibo Zhu;Zhiwei Yang;Haoxuan Xu;Tao Cao;Simin Chen;Fan Fang;Haodong Tang;Jun Tang;Junjie Hao;Dan Wu;Xinan Zhang;Kai Wang;Wei Chen

{"title":"Polyvinylidene Fluoride Enhanced Quantum Dot Short-Wave Infrared Photodetectors","authors":"Haibo Zhu;Zhiwei Yang;Haoxuan Xu;Tao Cao;Simin Chen;Fan Fang;Haodong Tang;Jun Tang;Junjie Hao;Dan Wu;Xinan Zhang;Kai Wang;Wei Chen","doi":"10.1109/LED.2025.3532323","DOIUrl":null,"url":null,"abstract":"Quantum dot (QD)-based short-wave infrared (SWIR) imagers are emerging as a promising alternative to traditional SWIR technologies, offering high resolution and low fabrication costs. However, the development of QD imager devices faces challenges such as high dark current density and poor stability. In this study, we propose using polyvinylidene fluoride (PVDF) molecules to optimize the quality of QD solids, thereby enhancing the performance of QD photodetectors (QD-PDs). Experimental results show that the introduction of PVDF reduces dark current density to <inline-formula> <tex-math>${J}_{\\text {D}} = 287$ </tex-math></inline-formula> nA/cm2 under a bias of -0.5 V. Additionally, PVDF improves humidity resistance and reduces leakage currents, contributing to the enhanced stability of both <inline-formula> <tex-math>${J}_{\\text {D}}$ </tex-math></inline-formula> and external quantum efficiency in QD-PDs. These findings demonstrate that PVDF can effectively improve the performance and stability of QD-based SWIR imagers.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"456-459"},"PeriodicalIF":4.1000,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10848210/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Quantum dot (QD)-based short-wave infrared (SWIR) imagers are emerging as a promising alternative to traditional SWIR technologies, offering high resolution and low fabrication costs. However, the development of QD imager devices faces challenges such as high dark current density and poor stability. In this study, we propose using polyvinylidene fluoride (PVDF) molecules to optimize the quality of QD solids, thereby enhancing the performance of QD photodetectors (QD-PDs). Experimental results show that the introduction of PVDF reduces dark current density to

${J}_{\text {D}} = 287$

nA/cm2 under a bias of -0.5 V. Additionally, PVDF improves humidity resistance and reduces leakage currents, contributing to the enhanced stability of both

${J}_{\text {D}}$

and external quantum efficiency in QD-PDs. These findings demonstrate that PVDF can effectively improve the performance and stability of QD-based SWIR imagers.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.