A Low Detection Limit and High Sensitivity Three-Dimensional Structured X-Ray Detector

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Ruiliang Xu;Xiaochuan Xia;Zhongyuan Han;Deyu Wang;Guanbing Ji;Hongyun Wang;Xingzhu Cui;Yang Liu;Xin Shi;Wei Jiang;Ruirui Fan;Hongwei Liang
{"title":"A Low Detection Limit and High Sensitivity Three-Dimensional Structured X-Ray Detector","authors":"Ruiliang Xu;Xiaochuan Xia;Zhongyuan Han;Deyu Wang;Guanbing Ji;Hongyun Wang;Xingzhu Cui;Yang Liu;Xin Shi;Wei Jiang;Ruirui Fan;Hongwei Liang","doi":"10.1109/LED.2025.3532677","DOIUrl":null,"url":null,"abstract":"A novel and highly sensitive X-ray detector with three-dimensional structured electrodes (3D-SiC) has been prepared on a high-resistivity silicon carbide substrate. The detector consistently demonstrates a low leakage current of 7.1 pA and 280 pA with the bias of 200 V at room temperature and 150°C, respectively. In the X-ray response test, the 3D-SiC detector exhibits high sensitivity of <inline-formula> <tex-math>${5}.{65}\\times {10} ^{{4}}~\\mu $ </tex-math></inline-formula>C<inline-formula> <tex-math>$\\cdot $ </tex-math></inline-formula> Gy<inline-formula> <tex-math>$_{\\text {air}}^{-{1}}\\cdot $ </tex-math></inline-formula>cm<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula>. Meanwhile, it exhibits a linear response to dose rates ranging from 0.67 to <inline-formula> <tex-math>$3.02~\\mu $ </tex-math></inline-formula>Gy<inline-formula> <tex-math>$_{\\text {air}}\\cdot $ </tex-math></inline-formula>s<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>. So, the detection limit could be calculated as low as 6.92 nGy<inline-formula> <tex-math>$_{\\text {air}}\\cdot $ </tex-math></inline-formula>s<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>. Comparing with planar semiconductor-based X-ray detectors, 3D-SiC detector shows ultra-high sensitivity with extremely low detection limit at room temperature. This characteristic renders it potentially advantageous in domains characterized by limited X-ray detection and imaging capabilities, such as the field of X-ray medical diagnosis.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"345-348"},"PeriodicalIF":4.1000,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10849669/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

A novel and highly sensitive X-ray detector with three-dimensional structured electrodes (3D-SiC) has been prepared on a high-resistivity silicon carbide substrate. The detector consistently demonstrates a low leakage current of 7.1 pA and 280 pA with the bias of 200 V at room temperature and 150°C, respectively. In the X-ray response test, the 3D-SiC detector exhibits high sensitivity of ${5}.{65}\times {10} ^{{4}}~\mu $ C $\cdot $ Gy $_{\text {air}}^{-{1}}\cdot $ cm $^{-{2}}$ . Meanwhile, it exhibits a linear response to dose rates ranging from 0.67 to $3.02~\mu $ Gy $_{\text {air}}\cdot $ s $^{-{1}}$ . So, the detection limit could be calculated as low as 6.92 nGy $_{\text {air}}\cdot $ s $^{-{1}}$ . Comparing with planar semiconductor-based X-ray detectors, 3D-SiC detector shows ultra-high sensitivity with extremely low detection limit at room temperature. This characteristic renders it potentially advantageous in domains characterized by limited X-ray detection and imaging capabilities, such as the field of X-ray medical diagnosis.
求助全文
约1分钟内获得全文 求助全文
来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信