{"title":"A Low Detection Limit and High Sensitivity Three-Dimensional Structured X-Ray Detector","authors":"Ruiliang Xu;Xiaochuan Xia;Zhongyuan Han;Deyu Wang;Guanbing Ji;Hongyun Wang;Xingzhu Cui;Yang Liu;Xin Shi;Wei Jiang;Ruirui Fan;Hongwei Liang","doi":"10.1109/LED.2025.3532677","DOIUrl":null,"url":null,"abstract":"A novel and highly sensitive X-ray detector with three-dimensional structured electrodes (3D-SiC) has been prepared on a high-resistivity silicon carbide substrate. The detector consistently demonstrates a low leakage current of 7.1 pA and 280 pA with the bias of 200 V at room temperature and 150°C, respectively. In the X-ray response test, the 3D-SiC detector exhibits high sensitivity of <inline-formula> <tex-math>${5}.{65}\\times {10} ^{{4}}~\\mu $ </tex-math></inline-formula>C<inline-formula> <tex-math>$\\cdot $ </tex-math></inline-formula> Gy<inline-formula> <tex-math>$_{\\text {air}}^{-{1}}\\cdot $ </tex-math></inline-formula>cm<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula>. Meanwhile, it exhibits a linear response to dose rates ranging from 0.67 to <inline-formula> <tex-math>$3.02~\\mu $ </tex-math></inline-formula>Gy<inline-formula> <tex-math>$_{\\text {air}}\\cdot $ </tex-math></inline-formula>s<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>. So, the detection limit could be calculated as low as 6.92 nGy<inline-formula> <tex-math>$_{\\text {air}}\\cdot $ </tex-math></inline-formula>s<inline-formula> <tex-math>$^{-{1}}$ </tex-math></inline-formula>. Comparing with planar semiconductor-based X-ray detectors, 3D-SiC detector shows ultra-high sensitivity with extremely low detection limit at room temperature. This characteristic renders it potentially advantageous in domains characterized by limited X-ray detection and imaging capabilities, such as the field of X-ray medical diagnosis.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"345-348"},"PeriodicalIF":4.1000,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10849669/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A novel and highly sensitive X-ray detector with three-dimensional structured electrodes (3D-SiC) has been prepared on a high-resistivity silicon carbide substrate. The detector consistently demonstrates a low leakage current of 7.1 pA and 280 pA with the bias of 200 V at room temperature and 150°C, respectively. In the X-ray response test, the 3D-SiC detector exhibits high sensitivity of ${5}.{65}\times {10} ^{{4}}~\mu $ C$\cdot $ Gy$_{\text {air}}^{-{1}}\cdot $ cm$^{-{2}}$ . Meanwhile, it exhibits a linear response to dose rates ranging from 0.67 to $3.02~\mu $ Gy$_{\text {air}}\cdot $ s$^{-{1}}$ . So, the detection limit could be calculated as low as 6.92 nGy$_{\text {air}}\cdot $ s$^{-{1}}$ . Comparing with planar semiconductor-based X-ray detectors, 3D-SiC detector shows ultra-high sensitivity with extremely low detection limit at room temperature. This characteristic renders it potentially advantageous in domains characterized by limited X-ray detection and imaging capabilities, such as the field of X-ray medical diagnosis.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.