Reduced Dark-Current, Rise-Time, and On-State Delay of Avalanche GaAs Photoconductive Semiconductor Switches by Annealing-Grinding Process

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-09 DOI:10.1109/LED.2025.3527980

Yingxiang Yang;Long Hu;Xianghong Yang;Jiahui Fu;Zhangjie Zhu;Mingchao Yang;Xin Li;Li Ni;Yang Zhou;Li Geng

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Abstract

In this letter, the performance of avalanche Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) aimed at DC charging and fiber-triggered high-voltage switches (HVS) applications is reported. The optimal annealing condition suitable for the device is shown to be 250 °C for 30 min by studying the effects of different annealing conditions on the dark-state leakage current of the PCSS. Based on this, a novel annealing-grinding (AG) process is proposed to improve the electrical characteristics of GaAs PCSS. With an electrode gap of 10 mm and a bias voltage of 40 kV, the leakage currents of A-GaAs PCSS, G-GaAs PCSS and AG-GaAs PCSS are reduced by 60.6 %, 64 % and 67.8 %, respectively, compared with the literature. Further, the effects of different processes on the electrical pulse output of avalanche GaAs PCSS, such as optoelectronic delay time and rise time, are investigated. The results show that the avalanche GaAs PCSS can operate stably at 50 kV with a rising edge of 1.2 ns and a photoelectric delay time of 23.93 ns.

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利用退火-磨削工艺降低雪崩砷化镓光导半导体开关的暗电流、上升时间和导态延迟

在这封信中，报告了雪崩砷化镓（GaAs）光导半导体开关（PCSS）的性能，旨在直流充电和光纤触发高压开关（HVS）应用。通过研究不同退火条件对PCSS暗态漏电流的影响，确定了适合该器件的最佳退火条件为250℃、30 min。在此基础上，提出了一种新的退火-磨削工艺来改善GaAs PCSS的电学特性。当电极间隙为10 mm，偏置电压为40 kV时，a - gaas、G-GaAs和AG-GaAs PCSS的漏电流分别比文献研究结果降低了60.6%、64%和67.8%。进一步研究了雪崩型GaAs PCSS的光电延迟时间和上升时间等不同工艺对电脉冲输出的影响。结果表明，雪崩型GaAs PCSS在50 kV下稳定工作，上升沿为1.2 ns，光电延迟时间为23.93 ns。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.