Fast Switching of 4H-SiC Light Triggered Thyristor by Photoconductive Assistance

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI:10.1109/LED.2025.3531368

Xi Wang;Yuxi Wan;Xuan Ji;Yulei Zhang;Hongbin Pu;Qi Wang;Zhiming Chen

引用次数: 0

Abstract

A 4H-SiC light-triggered thyristor is fabricated and triggered by a 355nm UV laser for fast switching performance by photoconductive assistance. The switching characteristics of the thyristor are tested in a resistive load circuit with a 220nF capacitor as an energy storage element. By combining the high-power UV light with a multi-gate structure, the thyristor is switched on fast through the photoconduction mechanism, overcoming the limitation of the internal positive feedback formation process. The peak current of the thyristor reaches to 328A, and the corresponding current density is about 8.2kA/cm2. The highest current rising rate (dI/dt) obtained in this work is 27.3kA/

$\mu $

s, and the corresponding current density rising rate is 682.5 kA/(cm

$^{{2}}\cdot \mu $

s).

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光导辅助4H-SiC光触发晶闸管的快速开关

制作了一种4H-SiC光触发晶闸管，并由355nm紫外激光触发，通过光导辅助实现了快速开关性能。在以220nF电容器作为储能元件的电阻负载电路中测试了晶闸管的开关特性。将高功率紫外光与多栅结构相结合，通过光导机制实现晶闸管的快速导通，克服了内部正反馈形成过程的限制。晶闸管的峰值电流达到328A，相应的电流密度约为8.2kA/cm2。所得电流上升速率（dI/dt）最高为27.3kA/ $\mu $ s，对应的电流密度上升速率为682.5 kA/(cm $^{{2}}\cdot \mu $ s)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.