Unraveling Fatigue Mechanisms in Ferroelectric AlScN Films: The Role of Oxygen Infiltration

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-08 DOI:10.1109/LED.2024.3522947

Ruiqing Wang;Jiuren Zhou;Danyang Yao;Siying Zheng;Bochang Li;Xiaoxi Li;Yan Liu;Yue Hao;Genquan Han

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引用次数: 0

Abstract

Confronting the endurance challenge in wurtzite ferroelectrics, this study provides a pioneering microscopic investigation into the fatigue mechanisms of AlScN films, identifying oxygen infiltration as the key factor. Utilizing transmission electron microscopy (TEM) and energy-dispersive spectroscopy (EDS), we dynamically tracked the redistribution of oxygen elements within Al0.65 Sc0.35N films during electrical stress cycling. Results reveal that prolonged stress cycling drives oxygen penetration along the grain boundaries into the bulk, leading to fatigue. Importantly, removing the oxygen source effectively suppresses oxygen infiltration, achieving an impressive endurance of

$4.6 \times 10^{7}$

cycles under a

$\mathbf {P}_{\mathbf {r}}$

$114.6~\mu $

C/cm2. These insights are pivotal for developing next-generation ferroelectric memory devices with superior endurance properties.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.