{"title":"15.1 W/mm Power Density GaN-on-GaN HEMT With High-Gradient Stepped-C Doped Buffer","authors":"Shiming Li;Mei Wu;Ling Yang;Bowen Yang;Haolun Sun;Meng Zhang;Bin Hou;Hao Lu;Xiaohua Ma;Yue Hao","doi":"10.1109/LED.2024.3524540","DOIUrl":null,"url":null,"abstract":"In this work, we propose for the first time a high-gradient (HG) stepped-Carbon (stepped-C) doped buffer design in GaN-on-GaN structures to enhance device RF performance. This design not only avoids the impact of the Fe tailing effect on the 2DEG but also effectively mitigates interface conduction losses caused by Si impurities at the regrown interface. Most importantly, the HG stepped-C buffer design significantly alleviates the trapping effects associated with high concentrations of C. The GaN-on-GaN HEMTs with HG stepped-C buffer achieved a breakdown voltage of 249 V, a peak transconductance (<inline-formula> <tex-math>${g}_{\\text {m}}\\text {)}$ </tex-math></inline-formula> of 319 mS/mm with a low current collapse (CC) of 6.1%. Collectively, these factors enabled the GaN-on-GaN HEMTs to achieve <inline-formula> <tex-math>${f}_{\\text {T}}$ </tex-math></inline-formula>/<inline-formula> <tex-math>${f}_{\\max }$ </tex-math></inline-formula> values of 47.6 GHz/68.1GHz, with a state-of-the-art output power density (<inline-formula> <tex-math>${P}_{\\text {out}}\\text {)}$ </tex-math></inline-formula> of 15.1 W/mm and a Power-Added efficiency (PAE) of 57.2% at 2 GHz. These results demonstrate the immense potential of HG stepped-C buffer in advancing the RF performance for GaN-on-GaN HEMTs.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"365-368"},"PeriodicalIF":4.1000,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10819411/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we propose for the first time a high-gradient (HG) stepped-Carbon (stepped-C) doped buffer design in GaN-on-GaN structures to enhance device RF performance. This design not only avoids the impact of the Fe tailing effect on the 2DEG but also effectively mitigates interface conduction losses caused by Si impurities at the regrown interface. Most importantly, the HG stepped-C buffer design significantly alleviates the trapping effects associated with high concentrations of C. The GaN-on-GaN HEMTs with HG stepped-C buffer achieved a breakdown voltage of 249 V, a peak transconductance (${g}_{\text {m}}\text {)}$ of 319 mS/mm with a low current collapse (CC) of 6.1%. Collectively, these factors enabled the GaN-on-GaN HEMTs to achieve ${f}_{\text {T}}$ /${f}_{\max }$ values of 47.6 GHz/68.1GHz, with a state-of-the-art output power density (${P}_{\text {out}}\text {)}$ of 15.1 W/mm and a Power-Added efficiency (PAE) of 57.2% at 2 GHz. These results demonstrate the immense potential of HG stepped-C buffer in advancing the RF performance for GaN-on-GaN HEMTs.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.