High RF Performance E-Mode GaN-on-Si HEMTs With Pₒᵤₜ of 5.32 W/mm Using High-Quality Ultrathin Buffer

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-06 DOI:10.1109/LED.2025.3526503

Jiale Du;Bin Hou;Ling Yang;Yachao Zhang;Qing Zhu;Meng Zhang;Mei Wu;Sen Huang;Fang Song;Hao Lu;Xuerui Niu;Mao Jia;Qingyuan Chang;Qian Yu;Borui Xue;Wen Zhao;Xiaohua Ma;Yue Hao

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引用次数: 0

Abstract

In this letter, we report a high-performance enhancement-mode GaN HEMT fabricated on high-quality ultrathin buffer, which achieved by a two-step-graded (TSG) transition structure on high-resistivity (HR) silicon substrate. Owing to rapid dislocation annihilation of TSG transition structure, the ultrathin buffer exhibits a low total dislocation density (TDD) of

${1}.{7}\times {10} ^{{9}}$

$^{-{2}}$

, which could make a contribution to the improvement of current and RF power performance. As a result, an E-mode GaN HEMT fabricated on this structure presents a maximum drain current of 620 mA/mm, a threshold voltage (

${V}_{\text {th}}\text {)}$

of 0.7 V, and a transconductance of 360 mS/mm. Furthermore, load-pull measurements yield a maximum output power density (

${P}_{\text {out}}\text {)}$

of 5.32 W/mm at 3.6 GHz and

${V}_{\text {DS}}=35$

V in pulse mode, which represents the top level for E-mode GaN-on-Si devices reported to date. The high-quality GaN epitaxy and splendid E-mode HEMT shown in this work reveal great potential for GaN-on-Si RF applications.

查看原文本刊更多论文

高射频性能的E-Mode GaN-on-Si HEMTs， Pₒᵤμ l为5.32 W/mm，采用高质量超薄缓冲液

在这封信中，我们报告了一种高性能增强模式GaN HEMT，该HEMT是通过在高电阻率（HR）硅衬底上的两步梯度（TSG）过渡结构实现的。由于TSG过渡结构的快速位错湮灭，超薄缓冲层的总位错密度（TDD）较低，为${1}。{7}\乘以{10}^{{9}}$ cm $^{-{2}}$，有助于提高电流和射频功率性能。结果表明，在该结构上制备的e模GaN HEMT的最大漏极电流为620 mA/mm，阈值电压（${V}_{\text {th}}\text{）}$为0.7 V，跨导为360 mS/mm。此外，负载-拉力测量在3.6 GHz下的最大输出功率密度（${P}_{\text {out}}}\text{）}$为5.32 W/mm，在脉冲模式下为${V}_{\text {DS}}=35$ V，这代表了迄今为止报道的e模式GaN-on-Si器件的最高水平。在这项工作中显示的高质量GaN外延和出色的e模式HEMT显示了GaN-on- si射频应用的巨大潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.