TCAD Modeling of ESD Diode Overshoot During Ultrafast TLP Events

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI:10.1109/LED.2025.3531797

Emanuele Groppo;Harald Gossner;Ralf Brederlow

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Abstract

This study exploits Technology Computer-Aided Design (TCAD) simulations to investigate the voltage overshoot phenomenon in Electrostatic Discharge (ESD) protection diodes undergoing fast rise time pulses, which severely threatens integrated circuits reliability. The conventional TCAD approach for diode transient characterization, based on the thermodynamic transport model and neglecting avalanche generation in the forward bias region, is challenged based on a comparative simulation study. A more comprehensive approach relying on the hydrodynamic carrier transport model is proposed, solving mismatches between simulation results and experimental data of scaled devices operating in the picosecond regime. The improved prediction of diode overshoot allows for transient response optimization, which is essential for the tightly constrained protection design of high-speed interfaces. An approximate solution of the Boltzmann Transport Equation (BTE) using the Spherical Harmonic Expansion (SHE) method is also carried out to provide more physical insights, and the overshoot dependence on rise time is investigated.

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超高速TLP事件中ESD二极管超调的TCAD建模

本文利用计算机辅助设计技术（TCAD）仿真研究了静电放电（ESD）保护二极管在快速上升时间脉冲作用下的电压超调现象，该现象严重威胁集成电路的可靠性。通过对比仿真研究，对传统的基于热力学输运模型而忽略正向偏置区雪崩产生的二极管瞬态特性TCAD方法提出了挑战。提出了一种基于水动力载流子输运模型的更全面的方法，解决了在皮秒范围内运行的缩放装置的模拟结果与实验数据之间的不匹配问题。改进的二极管超调预测允许瞬态响应优化，这对于高速接口的严格约束保护设计至关重要。利用球谐展开（SHE）方法对玻尔兹曼输运方程（BTE）进行了近似解，以提供更多的物理见解，并研究了超调量对上升时间的依赖关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.