First Demonstration of Deeply Scaled 2T0C DRAM With Record Data Retention and Fast Write Speed

Abstract

In this work, the first pitch scaling of 2T0C dynamic random-access memory (DRAM) based on indium-tin-oxide (ITO) transistors has been successfully fabricated, achieving a record-low contact length of 20 nm and channel length of 10 nm. The deeply scaled 2T0C DRAM demonstrates multi-level operation with an ultra-fast write speed of 10 ns, facilitated by a high on-state current. Furthermore, it features an outstanding data retention time exceeding 3000 s, attributed to its low off-state leakage current of $1.3 \times {10}^{-20}$ A/ $\mu $ m. This work highlights the tremendous potential of oxide semiconductor-based 2T0C DRAM for future high-density memory applications.