1T Process-Compatible Active Pixel Sensor With Enhanced Light Intensity Response Range

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI:10.1109/LED.2025.3531434

Hang Xu;Jianbin Guo;Tianyang Feng;Peng Liao;Yafen Yang;Qingqing Sun;David Wei Zhang

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引用次数: 0

Abstract

In this work, we present a novel one-transistor active pixel sensor with enhanced strong light response based on a semi-floating gate (SFG) transistor. The proposed device employs a metal-oxide-semiconductor (MOS) capacitor to store photo-generated holes from backside illumination, resulting in a larger full well capacity and improved light absorption characteristics. Our results demonstrate that the device exhibits an exceptionally wide light intensity response range, from

${1}.{0}\times {10} ^{-{6}}$

mW/cm2 to

${1}.{0}\times {10} ^{{2}}$

mW/cm2, achieving a substantial readout current difference exceeding

$0.1~\mu $

A. Furthermore, the low light response can be enhanced by more than 8 times by adjusting the operating voltage. Under standard 0.13-

$\mu $

m node, the fill factor is also improved by 30% without increase in cost and tenfold reduction is achieved in power consumption simultaneously.

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具有增强光强响应范围的1T工艺兼容有源像素传感器

在这项工作中，我们提出了一种基于半浮栅（SFG）晶体管的新型单晶体管有源像素传感器，具有增强的强光响应。该器件采用金属氧化物半导体（MOS）电容器来存储由背面照明产生的光孔，从而产生更大的满阱容量并改善光吸收特性。我们的研究结果表明，该器件表现出异常宽的光强响应范围，从$ bb0。{0}\乘以{10}^{-{6}}$ mW/cm2到${1}。{0}\ × {10} ^{{2}}$ mW/cm2，实现了显著的读出电流差，超过$0.1~\mu $ a。此外，通过调节工作电压，弱光响应可以提高8倍以上。在标准0.13- $\mu $ m节点下，在不增加成本的情况下，填充系数也提高了30%，同时功耗降低了十倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.