1T Process-Compatible Active Pixel Sensor With Enhanced Light Intensity Response Range

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI:10.1109/LED.2025.3531434

Hang Xu;Jianbin Guo;Tianyang Feng;Peng Liao;Yafen Yang;Qingqing Sun;David Wei Zhang

{"title":"1T Process-Compatible Active Pixel Sensor With Enhanced Light Intensity Response Range","authors":"Hang Xu;Jianbin Guo;Tianyang Feng;Peng Liao;Yafen Yang;Qingqing Sun;David Wei Zhang","doi":"10.1109/LED.2025.3531434","DOIUrl":null,"url":null,"abstract":"In this work, we present a novel one-transistor active pixel sensor with enhanced strong light response based on a semi-floating gate (SFG) transistor. The proposed device employs a metal-oxide-semiconductor (MOS) capacitor to store photo-generated holes from backside illumination, resulting in a larger full well capacity and improved light absorption characteristics. Our results demonstrate that the device exhibits an exceptionally wide light intensity response range, from <inline-formula> <tex-math>${1}.{0}\\times {10} ^{-{6}}$ </tex-math></inline-formula> mW/cm2 to <inline-formula> <tex-math>${1}.{0}\\times {10} ^{{2}}$ </tex-math></inline-formula> mW/cm2, achieving a substantial readout current difference exceeding <inline-formula> <tex-math>$0.1~\\mu $ </tex-math></inline-formula>A. Furthermore, the low light response can be enhanced by more than 8 times by adjusting the operating voltage. Under standard 0.13-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m node, the fill factor is also improved by 30% without increase in cost and tenfold reduction is achieved in power consumption simultaneously.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"448-451"},"PeriodicalIF":4.1000,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10845811/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

In this work, we present a novel one-transistor active pixel sensor with enhanced strong light response based on a semi-floating gate (SFG) transistor. The proposed device employs a metal-oxide-semiconductor (MOS) capacitor to store photo-generated holes from backside illumination, resulting in a larger full well capacity and improved light absorption characteristics. Our results demonstrate that the device exhibits an exceptionally wide light intensity response range, from

${1}.{0}\times {10} ^{-{6}}$

mW/cm2 to

${1}.{0}\times {10} ^{{2}}$

mW/cm2, achieving a substantial readout current difference exceeding

$0.1~\mu $

A. Furthermore, the low light response can be enhanced by more than 8 times by adjusting the operating voltage. Under standard 0.13-

$\mu $

m node, the fill factor is also improved by 30% without increase in cost and tenfold reduction is achieved in power consumption simultaneously.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.