The Temperature Coefficient of Threshold Voltage for High Voltage 4H-SiC FinFET

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-13 DOI:10.1109/LED.2025.3529190

Q. Wang;F. Udrea;H. Fujioka;H. Tomita;T. Nishiwaki;T. Kumazawa;M. Kumita;M. Okuda;H. Fujiwara

引用次数: 0

Abstract

This letter demonstrates a vertical high voltage 4H-SiC FinFET with very low temperature coefficient of threshold voltage

$\text {(}\text {dV}_{\text {th}}/\text {dT}\text {)}$

when compared to a standard SiC MOSFET. Here we theoretically and experimentally show that low temperature coefficient is an intrinsic property and a signature of the FinFET effect. We have fabricated SiC FinFETs with a breakdown voltage in excess of 800V, threshold voltage (Vth) of 1.55V at room temperature and a dVth/dT of −7.30mV/K. A calibrated TCAD model has been developed for a physical insight into the devices’ operation. Finally, the letter outlines the potential opportunities associated with this structure.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.