Experimental Investigation on the Electrical Properties of a-InGaZnO Thin-Film Transistors Under Total Dose Ionizing Radiation

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-17 DOI:10.1109/LED.2025.3531357

Guangan Yang;Geng Huang;Hong Zhu;Haotian Wu;Tianzhen Li;Tingrui Huang;Zuoxu Yu;Yong Xu;Weifeng Sun;Wangran Wu;Jinshun Bi

{"title":"Experimental Investigation on the Electrical Properties of a-InGaZnO Thin-Film Transistors Under Total Dose Ionizing Radiation","authors":"Guangan Yang;Geng Huang;Hong Zhu;Haotian Wu;Tianzhen Li;Tingrui Huang;Zuoxu Yu;Yong Xu;Weifeng Sun;Wangran Wu;Jinshun Bi","doi":"10.1109/LED.2025.3531357","DOIUrl":null,"url":null,"abstract":"This work conducts an experimental study on the effects of total-ionizing-dose (TID) on amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The threshold voltage (<inline-formula> <tex-math>${V}_{\\text {th}}\\text {)}$ </tex-math></inline-formula> exhibited a negative shift during irradiation, concomitant with a decline in carrier mobility (<inline-formula> <tex-math>$\\mu _{\\text {FE}}\\text {)}$ </tex-math></inline-formula> and an increase in off-current. The TID-induced H-related traps in the a-IGZO layer not only increase the free carriers but also passivate the oxygen vacancies, leading to a reduction in <inline-formula> <tex-math>$\\mu _{\\text {FE}}$ </tex-math></inline-formula> and on/off characteristics, as evidenced by the X-ray Photoelectron Spectroscopy (XPS) analysis. The irradiation damages on the a-IGZO TFTs were effectively mitigated and recovered through low-temperature (200°C) annealing, as confirmed by low-frequency noise (LFN) analysis. This approach offers a viable strategy for the radiation hardening of a-IGZO TFTs aiming at space applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 3","pages":"440-443"},"PeriodicalIF":4.1000,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10844323/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This work conducts an experimental study on the effects of total-ionizing-dose (TID) on amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The threshold voltage (

${V}_{\text {th}}\text {)}$

exhibited a negative shift during irradiation, concomitant with a decline in carrier mobility (

$\mu _{\text {FE}}\text {)}$

and an increase in off-current. The TID-induced H-related traps in the a-IGZO layer not only increase the free carriers but also passivate the oxygen vacancies, leading to a reduction in

$\mu _{\text {FE}}$

and on/off characteristics, as evidenced by the X-ray Photoelectron Spectroscopy (XPS) analysis. The irradiation damages on the a-IGZO TFTs were effectively mitigated and recovered through low-temperature (200°C) annealing, as confirmed by low-frequency noise (LFN) analysis. This approach offers a viable strategy for the radiation hardening of a-IGZO TFTs aiming at space applications.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.