Investigation of Inhibited String Characteristics According to Dimple Structures in 3D NAND Flash Memory

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-02-03 DOI:10.1109/LED.2025.3531354

Jesun Park;Myounggon Kang

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引用次数: 0

Abstract

In this letter, we investigated the boosted channel potential (V

$_{\mathbf {\textit {ch}}}$

) in inhibited strings with dimple (concave and convex) structures and analyzed the program (PGM) disturbance caused by

$V_{\mathbf {{ch}}}$

. In concave structures, the electric field (e-field) concentrated in the spacer (SP) region, resulting in a decrease in V

$_{\mathbf {\textit {ch}}}$

as the degree of concavity increases. In convex structures, the e-field concentrates in the center of the word line (WL) region, boosting

$V_{\mathbf {{ch}}}$

as the degree of convexity increases. This occurs due to the dispersion or concentration of the PGM voltage applied to the WL. High V

$_{\mathbf {\textit {ch}}}$

in the selected WL increases the potential difference (

$\Delta $

$_{\mathbf {\textit {ch}}}$

) between adjacent WLs. Due to structural characteristics, the lateral e-field (E

$_{\mathbf {m}}$

) is largest in concave structures, whereas the vertical e-field (E

$_{\mathbf {\textit {ox}}}$

) dominates in convex structures. Consequently, PGM disturb characteristics caused by hot carrier injection (HCI) are significantly degraded in convex structures.

查看原文本刊更多论文

3D NAND快闪记忆体中凹陷结构抑制串特性的研究

在这篇论文中，我们研究了在具有凹和凸结构的抑制串中增强的通道电位（V $ {\mathbf {\textit {ch}}}$），并分析了$V_{\mathbf {{ch}}}$引起的程序（PGM）干扰。在凹结构中，电场（e-field）集中在间隔区（SP），导致V $_{\mathbf {\textit {ch}}}$随着凹度的增大而减小。在凸结构中，e-field集中在单词线（WL）区域的中心，随着凸度的增加，$V_{\mathbf {{ch}}}$也随之增加。这是由于施加在WL上的PGM电压的分散或集中造成的。所选WL中的高V $_{\mathbf {\textit {ch}}}$增加相邻WL之间的电位差（$\Delta $ V $_{\mathbf {\textit {ch}}}$）。由于结构特点，凹结构中横向E -field （E $_{\mathbf {m}}$）最大，凸结构中纵向E -field （E $_{\mathbf {\textit {ox}}}$）占主导地位。因此，热载流子注入（HCI）引起的PGM扰动特性在凸结构中显著降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.