Investigation of Inhibited String Characteristics According to Dimple Structures in 3D NAND Flash Memory

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-02-03 DOI:10.1109/LED.2025.3531354

Jesun Park;Myounggon Kang

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引用次数: 0

Abstract

In this letter, we investigated the boosted channel potential (V

$_{\mathbf {\textit {ch}}}$

) in inhibited strings with dimple (concave and convex) structures and analyzed the program (PGM) disturbance caused by

$V_{\mathbf {{ch}}}$

. In concave structures, the electric field (e-field) concentrated in the spacer (SP) region, resulting in a decrease in V

$_{\mathbf {\textit {ch}}}$

as the degree of concavity increases. In convex structures, the e-field concentrates in the center of the word line (WL) region, boosting

$V_{\mathbf {{ch}}}$

as the degree of convexity increases. This occurs due to the dispersion or concentration of the PGM voltage applied to the WL. High V

$_{\mathbf {\textit {ch}}}$

in the selected WL increases the potential difference (

$\Delta $

$_{\mathbf {\textit {ch}}}$

) between adjacent WLs. Due to structural characteristics, the lateral e-field (E

$_{\mathbf {m}}$

) is largest in concave structures, whereas the vertical e-field (E

$_{\mathbf {\textit {ox}}}$

) dominates in convex structures. Consequently, PGM disturb characteristics caused by hot carrier injection (HCI) are significantly degraded in convex structures.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.