Effects of Carbon Lateral Implantation in Ge-rich GeSbTe Phase-Change Memory

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI:10.1109/LED.2025.3531547

C. De Camaret;G. Bourgeois;R. Antonelli;F. Mazen;M. Coig;F. Milesi;M. Bernard;V. Meli;S. Martin;N. Castellani;F. Andrieu;G. Navarro

引用次数: 0

Abstract

In this work we investigate the effects of lateral Carbon ions implantation in 4 kb Ge-rich GeSbTe (GST) Wall-type Phase-Change Memory (PCM) arrays with the objective of improving their reliability. Differently from previous studies, the ion beam was here tilted and tuned to localize Carbon at the lateral interface between the phase-change material and the SiN encapsulation layer after the patterning steps, known to have an important impact on the cell performances. Through the characterization of 4 kb arrays combined with TEM/EDX analyses, we study the effects of such localized Carbon on the device performances. Carbon laterally implanted devices show a more reliable forming process, a variability reduction of the SET and RESET states and an enhanced data retention at 250°C.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.