Low Frequency Noise of Elevated-Metal Metal-Oxide Thin-Film Transistor

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI:10.1109/LED.2025.3531369

Meng Zhang;Bo Wang;Yuwei Zhao;Zhendong Jiang;Lei Lu;Yan Yan;Lung-Chien Chen;Man Wong;Hoi-Sing Kwok

引用次数: 0

Abstract

In this letter, low frequency noise (LFN) of elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) is systematically investigated for the first time. EMMO TFT possesses distinctive LFN characteristics due to its unique device structure. The dominant mechanism of LFN varies with the channel length and overdrive voltage. The competition between carrier number fluctuation and mobility fluctuation is mainly tuned by the annihilation of ionized oxygen vacancies in the active layer located in the overlap region between the gate and the source/drain electrode. Besides, the short channel effect is also involved. This work provides a fresh perspective on LFN in metal oxide (MO) TFTs, offering practical design guidelines for fabricating robust MO TFTs.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.