High-Performance Quantum Dot Light-Emitting Diodes With Self-Assembled Bilayer Light Extraction Structure

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI:10.1109/LED.2025.3531377

Leilei Cui;Chao Zhong;Hailong Hu;Tailiang Guo;Fushan Li

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Abstract

Quantum dot photodiodes (QLEDs) hold promising potential for next-generation display and lighting devices due to their high emission efficiency, high color purity in the visible region, tunability of emission wavelengths, and low manufacturing costs. However, QLEDs confine a large number of photons inside the device that cannot be utilized, leading to low external quantum efficiency. In this paper, a simple and efficient strategy to construct bilayer light extraction structures is developed based on the self-assembled polystyrene (PS) microspheres embedded in polyvinyl butyral (PVB) film with excellent thermoplasticity. The maximum external quantum efficiency (EQE) of blue-QLED, green-QLED and red-QLED increased from 8.18% to 13.51%, 12.96% to 19.61% and 21.7% to 25%, respectively. It is found that bilayer light extraction structure does not change the light intensity angular distribution of Lambertian emission mode. The bilayer optically coupled structure proposed in this work provides an efficient and stable way for the improvement of QLED performance.

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具有自组装双层光提取结构的高性能量子点发光二极管

量子点光电二极管（qled）由于其高发射效率、可见光区域高色纯度、发射波长可调和低制造成本，在下一代显示和照明设备中具有广阔的潜力。然而，qled将大量光子限制在器件内部，无法利用，导致外部量子效率低。本文提出了一种基于自组装聚苯乙烯（PS）微球嵌入热塑性优异的聚乙烯醇丁醛（PVB）薄膜的简单高效的双层光提取结构构建策略。蓝色qled、绿色qled和红色qled的最大外量子效率（EQE）分别从8.18%提高到13.51%、12.96%提高到19.61%和21.7%提高到25%。发现双层抽光结构不改变朗伯发射模式的光强角分布。本文提出的双层光耦合结构为提高QLED的性能提供了一种高效、稳定的途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.