Enriched upconversion emission and electrical properties of Er3+/Yb3+/Mn: ZnWO4 phosphors for display and anti-counterfeit applications

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-02-24 DOI:10.1016/j.mssp.2025.109404

Swagata Chakraborty , Joydip Dutta , Mitesh Chakraborty

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引用次数: 0

Abstract

The upconverting codoped/tridoped ZnWO₄: Er³⁺/Yb³⁺/Mn materials have been synthesized for structural, electrical and optical studies. The X-ray diffraction (XRD) investigation confirms the highly crystalline monoclinic phase of the prepared material. The elemental mapping indicates complete incorporation of the raw ingredients in the host. Charge transfer band (CTB) is observed between the Mn⁴⁺ and O²⁻ ions in the interval 239–282 nm of the Diffuse Reflectance Spectra (DRS). Some characteristic absorption bands of Mn³⁺ ion due to ⁵E^/ →⁵E^// transition is also observed in the region 806–908 nm of the DRS spectra. We have also reported the Raman and Fourier transform of Infra-red (FTIR) vibrations of the optimized sample in the present investigation. The temperature dependant EPR spectra infers cation vacancies in the host matrix. The XPS study confirms the mixed state of Mn⁴⁺ and Mn³⁺ ion in the host material. The CIE spectra and photometric calculations shows that these high colour purity phosphors may be explored to design cool LEDs. The investigation of electrical parameters advocates display applications in the temperature region 30 °C to 100 °C of the prepared material. The anti-counterfeit application is also demonstrated in the present study.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.