Strain‐Induced Reduction of Centrosymmetry in Rare‐Earth Iron Garnet Thin Films

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
EMK Ikball Ahamed, Hiroyasu Yamahara, Md Shamim Sarker, Haining Li, Kazuo Morikawa, Kohei Yamagami, Masaki Kobayashi, Munetoshi Seki, Hitoshi Tabata
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Abstract

Rare‐earth iron garnets (RIG, R3Fe5O12) are insulating ferrimagnets with high inversion symmetry because of their centrosymmetric cubic crystal structure. However, this high centrosymmetry can be reduced by introducing a non‐uniform strain, leading to a tetragonally distorted lattice structure. In this study, the strain‐induced lattice distortions and symmetry‐breaking features are investigated in compressively strained Sm3Fe5O12 and tensile‐strained Lu3Fe5O12 thin films around critical thicknesses. Experiments indicate that tensile strain prevents the in‐plane epitaxy from relaxing, whereas compressive strain leads to easy relaxation after reaching a critical threshold triggered by misfit dislocations. A non‐zero orbital moment, a more than tenfold increase in coercivity, and an increase in Gilbert damping near the critical thickness indicate a reduction of spatial inversion symmetry without forming any misfit dislocations. It is speculated that strain energy in uniformly strained epitaxial thin films has been partially released when the thickness reached about the critical thickness. The proposed strain‐mediated reduction of centrosymmetry may pave the way to achieve controllable magneto‐dynamics in dislocation‐free tensile strained RIG thin films.

Abstract Image

稀土铁榴石(RIG,R3Fe5O12)因其中心对称的立方晶体结构而成为具有高度反转对称性的绝缘铁磁体。然而,通过引入非均匀应变,这种高中心对称性可能会降低,从而导致四方扭曲的晶格结构。在本研究中,研究了在临界厚度附近的压缩应变 Sm3Fe5O12 和拉伸应变 Lu3Fe5O12 薄膜中由应变引起的晶格畸变和对称性破坏特征。实验表明,拉伸应变会阻止面内外延的松弛,而压缩应变则会在达到由错位引发的临界阈值后导致轻松松弛。在临界厚度附近,轨道力矩不为零、矫顽力增加十倍以上、吉尔伯特阻尼增加,表明空间反转对称性降低,但没有形成任何错配位错。据推测,当厚度达到临界厚度左右时,均匀应变外延薄膜中的应变能已被部分释放。所提出的应变介导的中心对称性降低可能会为实现无位错拉伸应变 RIG 薄膜的可控磁动力学铺平道路。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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