Ohmic Response in BiFeO3 Domain Walls by Submicron‐Scale Four‐Point Probe Resistance Measurements

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-02-21 DOI:10.1002/aelm.202400794

Jan L. Rieck, Marcel L. Kolster, Romar A. Avila, Mian Li, Guus Rijnders, Gertjan Koster, Thom Palstra, Roeland Huijink, Beatriz Noheda

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Abstract

Conducting domain walls (DWs) hold promise for novel electronic devices. However, the electrical characterization of DWs is challenging because of their nanoscale dimensions and the large driving fields that are typically required due to the high resistance of the hosting material. Until now, lateral transport measurements of DWs have mainly been realized using lateral nano‐gap electrode structures or conventional conducting atomic force microscopy (cAFM). Here, a non‐destructive and lithography‐free method is reported for lateral transport measurement of DWs, which is applied to BiFeO3 (BFO) thin films utilizing a submicron‐scale multi‐point probe (MPP). Using different sets of individually biased probe tips, two‐ and four‐point measurements can be conducted over various lateral distances with a minimum tip spacing of several hundreds of nanometers. These measurements reveal the ohmic behavior of ferroelastic/ferroelectric 71° DWs in BFO thin films and the first collinear four‐point resistivity value of a single DW (free of lead and contact resistances). These findings contribute to a better understanding of DW conduction, highlighting the capability of MPPs for lateral transport measurements of materials containing conducting or even memristive nanoscale networks.

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导电畴壁（DWs）有望用于新型电子设备。然而，DWs 的电学表征具有挑战性，因为它们具有纳米级尺寸，而且由于寄主材料的高电阻，通常需要较大的驱动场。迄今为止，DWs 的横向传输测量主要通过横向纳米间隙电极结构或传统的导电原子力显微镜（cAFM）来实现。本文报告了一种非破坏性和免光刻的 DW 横向传输测量方法，该方法利用亚微米级多点探针 (MPP) 应用于 BiFeO3 (BFO) 薄膜。使用不同的独立偏压探针针尖，可以在不同的横向距离上进行两点和四点测量，最小针尖间距为几百纳米。这些测量结果揭示了 BFO 薄膜中 71° DW 的铁弹性/铁电性欧姆行为，以及单个 DW（不含引线电阻和接触电阻）的首个共线四点电阻率值。这些发现有助于更好地理解 DW 的传导，突出了 MPPs 在横向传输测量包含导电甚至记忆性纳米级网络的材料方面的能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.