Study on electron and gamma irradiation effects and damage mechanism of GaN HEMT

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-02-22 DOI:10.1016/j.microrel.2025.115616

Hongxia Li , Hongping Guo , Rongxing Cao , Hui Tu , Xin Huang , Yuxiong Xue , Xianghua Zeng

{"title":"Study on electron and gamma irradiation effects and damage mechanism of GaN HEMT","authors":"Hongxia Li , Hongping Guo , Rongxing Cao , Hui Tu , Xin Huang , Yuxiong Xue , Xianghua Zeng","doi":"10.1016/j.microrel.2025.115616","DOIUrl":null,"url":null,"abstract":"<div><div>Electron and gamma irradiation experiments were carried out on GaN HEMT(High Electron Mobility Transistor) devices, the total dose effect of different irradiation sources was studied, and the difference of radiation damage to the device was analyzed. The test results show that the threshold voltage of the device has negative drift after electron irradiation, the drain current increases obviously, and the threshold voltage deviation increases with the increase of irradiation dose. The trends observed in gamma and electron irradiation are analogous; however, at an identical irradiation dose, the total dose effect elicited by gamma irradiation is more prominent. In order to compare the effects of electron and gamma irradiation on the device, the annealing effects of different irradiation sources at the same time were compared and analyzed. It is found that the annealing effect of gamma irradiation devices is more obvious than that of electron irradiation devices under the same irradiation dose and annealing time. The simulation results show that the electric field intensity, electron and hole concentration in the device after gamma irradiation were greater than that generated by electron irradiation under the same condition.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"167 ","pages":"Article 115616"},"PeriodicalIF":1.6000,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425000290","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Electron and gamma irradiation experiments were carried out on GaN HEMT(High Electron Mobility Transistor) devices, the total dose effect of different irradiation sources was studied, and the difference of radiation damage to the device was analyzed. The test results show that the threshold voltage of the device has negative drift after electron irradiation, the drain current increases obviously, and the threshold voltage deviation increases with the increase of irradiation dose. The trends observed in gamma and electron irradiation are analogous; however, at an identical irradiation dose, the total dose effect elicited by gamma irradiation is more prominent. In order to compare the effects of electron and gamma irradiation on the device, the annealing effects of different irradiation sources at the same time were compared and analyzed. It is found that the annealing effect of gamma irradiation devices is more obvious than that of electron irradiation devices under the same irradiation dose and annealing time. The simulation results show that the electric field intensity, electron and hole concentration in the device after gamma irradiation were greater than that generated by electron irradiation under the same condition.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.