Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platforms

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-01-08 DOI:10.1016/j.sse.2024.109055

Andreas Fuchsberger , Lukas Wind , Daniele Nazzari , Johannes Aberl , Enrique Prado Navarrete , Moritz Brehm , Jean-Michel Hartmann , Frank Fournel , Lilian Vogl , Peter Schweizer , Andrew M. Minor , Masiar Sistani , Walter M. Weber

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引用次数: 0

Abstract

Integrating Ge onto SOI should enhance the drive currents and switching speeds of transistors. However, Ge on insulator platforms have fallen short of providing these benefits and are additionally facing processing issues and high fabrication costs. To cope with these issues, we use an ultra-low-temperature molecular-beam epitaxy growth of Ge layers on SOI and strained SOI substrates, as device prototyping platforms. Thereof, we obtain symmetric IV-on-states in Ge based reconfigurable transistors, enabling to investigate the temperature-dependent gating capabilities and identify the dominant transport mechanisms. In this respect, to give a comprehensive picture of the influence of different parameters on transport mechanisms, temperature-dependent gate- and bias-dependent current–voltage data was evaluated constructing 2-D colormap representations.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.