Application of IGBT junction temperature estimation in hybrid electric vehicles

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-02-20 DOI:10.1016/j.microrel.2025.115629

Tianyu Ma, Bowen Yan, Bin Liu, Jun Liu

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引用次数: 0

Abstract

The Insulated Gate Bipolar Transistor (IGBT) is a crucial component in hybrid electric vehicle electric drive systems. Estimating the IGBT junction temperature is essential for forecasting its lifespan and managing the heat within the power module. This paper presents and applies two methods for predicting IGBT junction temperature: the thermal network model and the empirical relationship method. Among them, the thermal impedance method is analyzed and extended to engine application by introducing a coefficient β = f (speed, coolant boundary). The empirical relationship is first proposed considering the effect of thermal boundary. Both methods are applied in CHANGAN Plug-in Hybrid Electric Vehicles (PHEV). Experimental results indicate that the thermal network method provides fast and accurate temperature estimates with the absolute error remaining below ±5 % under over 99 % operating conditions. In contrast, the empirical relationship method offers lower frequency but solid predictions under separate working conditions. Both methods were evaluated through road tests and demonstrated the capability to provide reasonable temperature variations of the power module.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.