Numerical evaluation of radiation degradation for P-MOSFET power devices under total ionizing dose effect

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-02-20 DOI:10.1016/j.microrel.2025.115627

Na-Yeon Choi, Sung-Uk Zhang

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Abstract

In this study, the degradation of electrical and thermal properties of a packaged power semiconductor device due to cumulative radiation dose was numerically evaluated using electrical-thermal simulations. Si P-channel MOSFET devices were irradiated stepwise using a cobalt-60 gamma source. The changes in the electrical performance of the irradiated devices and the changes in the thermal conductivity of the encapsulation were identified. In addition, the changes in the thermal and electric properties of equivalent chips with changes in drain current and encapsulation surface temperature were numerically analyzed using electric-thermal multi-physics analysis. The results revealed that with the cumulative radiation dose rising from zero to 3000 krad, the chip's equivalent resistance increased significantly by 442.66 %, from 1.301 to 7.06 Ω∙mm. Concurrently, thermal conductivity decreased by 88.53 %, from 24.27 to 2.96 W/m∙K, and thermal resistance increased by 391 %, from 4.14 °C/W to 20.33 °C/W. These results quantitatively establish the degradation of electrical and thermal behavior of packaged P-channel Si MOSFETs due to radiation, as calculated by finite element analysis.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.