Superlattice Si/SiC APD with improved photo-sensitivity and stability: Application as low noise single photon detector

IF 3.1 3区物理与天体物理 Q2 Engineering

Optik Pub Date : 2025-02-12 DOI:10.1016/j.ijleo.2025.172256

Debraj Modak , Saunak Bhattacharya , Karabi Ganguly , Indranath Sarkar , Moumita Mukherjee , Abhijit Kundu

{"title":"Superlattice Si/SiC APD with improved photo-sensitivity and stability: Application as low noise single photon detector","authors":"Debraj Modak , Saunak Bhattacharya , Karabi Ganguly , Indranath Sarkar , Moumita Mukherjee , Abhijit Kundu","doi":"10.1016/j.ijleo.2025.172256","DOIUrl":null,"url":null,"abstract":"<div><div>This study reports the superiority of superlattice Si/SiC Avalanche Photodiode (APD) over its flat profile Si and SiCcounterparts. A large signal quantum corrected drift-diffusion (LSQC-DD) model is developed and used for the electro optical characteristic studies of the devices for application in UV detection. The effect of charge bump in the optimized doping profile near the metallurgical junction of the Device Under Test (DUT) is studied and reported for the first time in detailed. These results in the betterment of quantum efficiency compared to its flat profile counterpart (95 % vs.91 %). This study also reports the suitability of 3 × 3 array based APD photo sensors in terms of photo responsivity and quantum efficiency. Significant Noise reduction in case of Si/SiC superlattice devices would open its application possibility as low noise single photon detector. The validity of the indigenously developed simulator is established through experimental verification. Fabrication feasibility of the new class of superlattice APD is presented. To the best of authors' knowledge this is the first report on superlattice Si/SiC APD as single photon UV detector.</div></div>","PeriodicalId":19513,"journal":{"name":"Optik","volume":"326 ","pages":"Article 172256"},"PeriodicalIF":3.1000,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optik","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0030402625000440","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"Engineering","Score":null,"Total":0}

引用次数: 0

Abstract

This study reports the superiority of superlattice Si/SiC Avalanche Photodiode (APD) over its flat profile Si and SiCcounterparts. A large signal quantum corrected drift-diffusion (LSQC-DD) model is developed and used for the electro optical characteristic studies of the devices for application in UV detection. The effect of charge bump in the optimized doping profile near the metallurgical junction of the Device Under Test (DUT) is studied and reported for the first time in detailed. These results in the betterment of quantum efficiency compared to its flat profile counterpart (95 % vs.91 %). This study also reports the suitability of 3 × 3 array based APD photo sensors in terms of photo responsivity and quantum efficiency. Significant Noise reduction in case of Si/SiC superlattice devices would open its application possibility as low noise single photon detector. The validity of the indigenously developed simulator is established through experimental verification. Fabrication feasibility of the new class of superlattice APD is presented. To the best of authors' knowledge this is the first report on superlattice Si/SiC APD as single photon UV detector.

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来源期刊

Optik 物理-光学

CiteScore

6.90

自引率

12.90%

发文量

1471

审稿时长

46 days

期刊介绍： Optik publishes articles on all subjects related to light and electron optics and offers a survey on the state of research and technical development within the following fields: Optics: -Optics design, geometrical and beam optics, wave optics- Optical and micro-optical components, diffractive optics, devices and systems- Photoelectric and optoelectronic devices- Optical properties of materials, nonlinear optics, wave propagation and transmission in homogeneous and inhomogeneous materials- Information optics, image formation and processing, holographic techniques, microscopes and spectrometer techniques, and image analysis- Optical testing and measuring techniques- Optical communication and computing- Physiological optics- As well as other related topics.