Enhancement of device performance in vertical Au/Ni/β-Ga2O3 Schottky barrier diodes using regularly aligned inner field plates

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-02-13 DOI:10.1016/j.mssp.2025.109371

Hoon-Ki Lee , V. Janardhanam , Jae-Kyoung Mun , Tae-Hoon Jang , Kyu-Hwan Shim , Hyung Joong Yun , Jonghan Won , Chel-Jong Choi

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Abstract

In the present study, the device performance of vertical Au/Ni/β-Ga₂O₃ Schottky barrier diodes with regularly aligned inner field plates is investigated. The fabricated Schottky barrier diode with regularly aligned inner field plates achieved an improved breakdown voltage (V_BR) of 590 V, compared to the 500 V for the diode without field plates. However, the power figure-of-merit (FOM) of the diode with inner field plates was determined to be 31.9 MWcm⁻², which is lower than the FOM of 48.2 MWcm⁻² for that of the diode without field plates. The FOM is decreased in the former because of its increased turn-on resistance associated with decreasing effective device area caused by the array of SiO₂ field plates. A technology computer-aided design (TCAD) simulation reveals that the regularly aligned inner field plates are effective in suppressing the peak electric field distribution under the anode edges, which increases V_BR. The results of this work offer a simple and effective approach for reducing electric field crowding under anode edges to enhance the performance of Ga₂O₃-based power devices.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.