Resistive Switching phenomenon in FD-SOI Ω-Gate FETs: Transistor performance recovery and back gate bias influence

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-01-22 DOI:10.1016/j.sse.2025.109067

C. Valdivieso, R. Rodriguez, A. Crespo-Yepes, J. Martin-Martinez, M. Nafria

引用次数: 0

Abstract

Resistive Switching (RS) phenomenon, usually observed in two-terminal memristor devices, refers to the reversible change in resistance of a material under an external electric field. In this work, RS has been observed in N-type Fully Depleted Silicon-On-Insulator (FDSOI) Ω-gate nanowire field-effect transistors (NW-FETs). For the first time, partial recovery of the transistor’s I_D-V_D characteristics during the RS cycling is experimentally demonstrated, indicating the potential of the device to be used both as a transistor and a memristor. The effect of increasing the back gate voltage on the RS characteristics was also experimentally investigated. It was found that higher back gate voltages enhance the RS parameters, thereby establishing a direct relationship between back bias and device performance.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.