Radiation effects of flexible IMM triple junction solar cell under 14 MeV neutron irradiation

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-02-13 DOI:10.1016/j.mssp.2025.109382

Shuyi Zhang , Xuqiang Liu , Minqiang Liu , Meng Li , Fang Deng , Abuduwayiti Aierken

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引用次数: 0

Abstract

This paper aims to study the degradation mechanism of GaInP/GaAs/InGaAs flexible (Inverted Metamorphic) IMM triple-junction solar cells (3JSCs) caused by 14 MeV neutron irradiation. We present the analysis of the electrical performance of IMM 3JSCs before and after the irradiation including light and dark I-V characteristics, as well as the spectral response of each sub-cells. The results show that the electrical parameters decrease with increasing neutron fluence, especially under the higher fluence (8.00 × 10¹² n/cm²), the short circuit current (I_sc), open circuit voltage (V_oc) and conversion efficiency (Eff) drop to 93.23 %, 86.04 % and 74.48 % of its initial values, respectively. At the same time, under the fluence of 8.00 × 10¹² n/cm², the series resistance (R_s) increased to 1.38 times of the unirradiated value, while the shunt resistance (R_sh) decreased to 0.12 times of the initial value. In addition, the degradation level of external quantum efficiency, EQE, for each sub-cell implies that the GaInP top cell has better radiation resistance, GaAs middle cell degrades in long wavelength region of spectrum with increasing the fluence. The severe degradation occurs in the InGaAs bottom cell under the fluence of 8.00 × 10¹² n/cm², the EQE is reduced by 15 % compared to unirradiated solar cell.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.