Comparative study on MnO2, Mn2O3, and Mn3O4: Enhancing chemical-mechanical polishing properties of 4H-SiC silicon wafers

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-02-12 DOI:10.1016/j.mssp.2025.109359

Dexing Cui , Baoguo Zhang , Wenhao Xian , Min Liu , Shitong Liu , Pengfei Wu , Ye Wang

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引用次数: 0

Abstract

Silicon carbide (SiC) is an exemplary material known for its characteristic hardness and brittleness. Achieving efficient planarization of SiC substrate is a challenging task. In this paper, the effect of enhancement for different manganese oxides in chemical mechanical polishing of 4H-SiC wafers was compared. Manganese dioxide (MnO₂) provided an excellent improvement ability, compared to Manganese trioxide (Mn₂O₃) and Trimanganese tetroxide (Mn₃O₄), in chemical mechanical polishing of 4H-SiC wafers with material removal rate and surface roughness (Sq) up to 1176 nm/h and 0.258 nm, respectively. Furthermore, a synergistic enhancement method combining MnO₂ and Mn₃O₄ was proposed to improve the polishing performance of 4H-SiC wafers. Then, the corrosion mechanism of 4H-SiC in potassium permanganate solutions with different manganese oxides was investigated by electrochemical analysis. Finally, the enhancement mechanism of manganese oxides for 4H-SiC wafers in chemical mechanical polishing was characterized and analyzed using X-ray photoelectron spectroscopy (XPS) and UV–visible spectroscopy (UV).

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.