A critical review on improving and moving beyond the 2 nm horizon: Future directions and impacts in next-generation integrated circuit technologies

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-02-09 DOI:10.1016/j.mssp.2025.109376

Mohamed Morsy, Faycal Znid, Abdallah Farraj

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Abstract

This review article presents a thorough analysis of the present advancements and forthcoming trends within the integrated circuit (IC) industry, emphasizing its essential role in the fabric of modern technology across several key sectors, including consumer electronics, healthcare, and the automotive industry. As the sector moves beyond the 2 nm technology node, the paper investigates the obstacles to perpetuating Moore's Law, highlighting challenges such as quantum mechanical effects, the need for unprecedented manufacturing precision, and the limitations of existing materials. The review places special emphasis on the significance of cutting-edge innovations such as 3D integration, which layers circuits vertically to enhance connectivity and save space, and the exploration of alternative semiconductor materials like graphene and transition metal dichalcogenides (TMDs), which offer superior electrical, thermal, and mechanical properties. Additionally, it discusses the rise of emerging computing paradigms such as quantum circuits, which leverage the principles of quantum mechanics, and photonic circuits, which use light to achieve ultra-fast data processing speeds. The article also examines the economic and environmental impacts of advancing IC technology, underscoring the need for sustainable practices and new approaches to maintain progress. By addressing these key areas, this review underscores the transformative potential of next-generation IC technologies and their pivotal role in shaping the future of computing and electronics.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.