Analysis on thermal simulation of MOSFET based on voids under working conditions

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Shiming Lyu , Xiangyu Yang , Baofan Chen , Shijian Su
{"title":"Analysis on thermal simulation of MOSFET based on voids under working conditions","authors":"Shiming Lyu ,&nbsp;Xiangyu Yang ,&nbsp;Baofan Chen ,&nbsp;Shijian Su","doi":"10.1016/j.microrel.2024.115585","DOIUrl":null,"url":null,"abstract":"<div><div>In automotive electronic water pumps, MOSFET is used as power conversion devices to drive water pump motors, however, the high temperature of the engine will cause the electronic water pump MOSFET to overheat and fail. In order to effectively reduce the overheating failure of MOSFET, a thermal simulation model of printed circuit board MOSFET for automotive electronic water pump controllers was established using FLUENT software. The temperature rise characteristics of MOSFET with different void rates under single and multi-void SMT states were analyzed. The analysis results indicate that the thermal resistance of MOSFET in printed circuit boards increases with the increase of void fraction, and the simulation results are verified through experiments, which are consistent with the simulation results. At the same time, when the void ratio is greater than 10 %, the heat dissipation effect of a single void is more pronounced than that of a void. The thermal analysis of printed circuit board MOSFET provides support for effectively controlling MOSFET temperature rise and reducing MOSFET thermal failure.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"165 ","pages":"Article 115585"},"PeriodicalIF":1.6000,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424002658","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

In automotive electronic water pumps, MOSFET is used as power conversion devices to drive water pump motors, however, the high temperature of the engine will cause the electronic water pump MOSFET to overheat and fail. In order to effectively reduce the overheating failure of MOSFET, a thermal simulation model of printed circuit board MOSFET for automotive electronic water pump controllers was established using FLUENT software. The temperature rise characteristics of MOSFET with different void rates under single and multi-void SMT states were analyzed. The analysis results indicate that the thermal resistance of MOSFET in printed circuit boards increases with the increase of void fraction, and the simulation results are verified through experiments, which are consistent with the simulation results. At the same time, when the void ratio is greater than 10 %, the heat dissipation effect of a single void is more pronounced than that of a void. The thermal analysis of printed circuit board MOSFET provides support for effectively controlling MOSFET temperature rise and reducing MOSFET thermal failure.
求助全文
约1分钟内获得全文 求助全文
来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信